SISS66DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 30V 49.1/178.3A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49.1A (Ta), 178.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.38mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 85.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3327 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.48 EUR |
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Technische Details SISS66DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 49.1/178.3A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 49.1A (Ta), 178.3A (Tc), Rds On (Max) @ Id, Vgs: 1.38mOhm @ 20A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 85.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3327 pF @ 15 V.
Weitere Produktangebote SISS66DN-T1-GE3 nach Preis ab 1.42 EUR bis 3.56 EUR
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SISS66DN-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET N-CHANNEL 30-V (D-S) MOSFET W/ |
auf Bestellung 17473 Stücke: Lieferzeit 14-28 Tag (e) |
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SISS66DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 49.1/178.3A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49.1A (Ta), 178.3A (Tc) Rds On (Max) @ Id, Vgs: 1.38mOhm @ 20A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 85.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3327 pF @ 15 V |
auf Bestellung 5900 Stücke: Lieferzeit 21-28 Tag (e) |
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| SISS66DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 42.1W Mounting: SMD Kind of package: reel; tape Drain current: 142.6A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET + Schottky Case: PowerPAK® 1212-8 On-state resistance: 2.19mΩ Gate-source voltage: ±20/±-16V Pulsed drain current: 200A Power dissipation: 42.1W Gate charge: 85.5nC Polarisation: unipolar Technology: TrenchFET® Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS66DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 42.1W Mounting: SMD Kind of package: reel; tape Drain current: 142.6A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET + Schottky Case: PowerPAK® 1212-8 On-state resistance: 2.19mΩ Gate-source voltage: ±20/±-16V Pulsed drain current: 200A Power dissipation: 42.1W Gate charge: 85.5nC Polarisation: unipolar Technology: TrenchFET® |
Produkt ist nicht verfügbar |