SISS80DN-T1-GE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 255 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 255 Stücke
Lieferzeit 14-28 Tag (e)
Technische Details SISS80DN-T1-GE3
Description: MOSFET N-CH 20V 58.3A/210A PPAK, Supplier Device Package: PowerPAK® 1212-8S, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 5W (Ta), 65W (Tc), Rds On (Max) @ Id, Vgs: 0.92mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 58.3A (Ta), 210A (Tc), FET Type: N-Channel, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): +12V, -8V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Part Status: Active.
Preis SISS80DN-T1-GE3 ab 3.15 EUR bis 4.08 EUR
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SISS80DN-T1-GE3 Hersteller: Vishay Trans MOSFET N-CH 20V 58.3A 8-Pin PowerPAK 1212-S EP T/R 
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 20V 58.3A/210A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 10 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8S Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): +12V, -8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8S Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 5W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 0.92mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 58.3A (Ta), 210A (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 20V 58.3A/210A PPAK Supplier Device Package: PowerPAK® 1212-8S Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 5W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 0.92mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 58.3A (Ta), 210A (Tc) FET Type: N-Channel Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): +12V, -8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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