SISS80DN-T1-GE3

SISS80DN-T1-GE3

SISS80DN-T1-GE3

Hersteller: Vishay Semiconductors
MOSFET N-Channel 20V (D-S)
siss80dn-2897713.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 255 Stücke
Lieferzeit 14-28 Tag (e)

13+ 4.08 EUR
14+ 3.72 EUR
25+ 3.2 EUR
100+ 3.15 EUR

Technische Details SISS80DN-T1-GE3

Description: MOSFET N-CH 20V 58.3A/210A PPAK, Supplier Device Package: PowerPAK® 1212-8S, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 5W (Ta), 65W (Tc), Rds On (Max) @ Id, Vgs: 0.92mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 58.3A (Ta), 210A (Tc), FET Type: N-Channel, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): +12V, -8V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Part Status: Active.

Preis SISS80DN-T1-GE3 ab 3.15 EUR bis 4.08 EUR

SISS80DN-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 20V 58.3A 8-Pin PowerPAK 1212-S EP T/R
siss80dn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISS80DN-T1-GE3
SISS80DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 58.3A/210A PPAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +12V, -8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 58.3A (Ta), 210A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISS80DN-T1-GE3
SISS80DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 58.3A/210A PPAK
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 58.3A (Ta), 210A (Tc)
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +12V, -8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen