Produkte > VISHAY SILICONIX > SISS80DN-T1-GE3
SISS80DN-T1-GE3

SISS80DN-T1-GE3 Vishay Siliconix

siss80dn.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 58.3A/210A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58.3A (Ta), 210A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.46 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SISS80DN-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 20V 58.3A/210A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58.3A (Ta), 210A (Tc), Rds On (Max) @ Id, Vgs: 0.92mOhm @ 10A, 10V, Power Dissipation (Max): 5W (Ta), 65W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): +12V, -8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 10 V.

Weitere Produktangebote SISS80DN-T1-GE3 nach Preis ab 1.23 EUR bis 5.05 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
SISS80DN-T1-GE3 SISS80DN-T1-GE3 VISHAY siss80dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 169A; Idm: 300A
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 42W
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 300A
Gate charge: 122nC
Technology: TrenchFET®
Drain current: 169A
Kind of channel: enhancement
Drain-source voltage: 20V
Gate-source voltage: -8...12V
On-state resistance: 3mΩ
auf Bestellung 5784 Stücke:
Lieferzeit 14-21 Tag (e)
27+3.17 EUR
41+2.11 EUR
48+1.81 EUR
75+1.54 EUR
100+1.46 EUR
500+1.23 EUR
Mindestbestellmenge: 27 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SISS80DN-T1-GE3 SISS80DN-T1-GE3 Vishay Semiconductors siss80dn.pdf MOSFETs N-Channel 20V (D-S)
auf Bestellung 1505 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.96 EUR
10+3.19 EUR
100+2.2 EUR
500+1.77 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SISS80DN-T1-GE3 SISS80DN-T1-GE3 Vishay Siliconix siss80dn.pdf Description: MOSFET N-CH 20V 58.3A/210A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58.3A (Ta), 210A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 10 V
auf Bestellung 8283 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.05 EUR
10+3.25 EUR
100+2.23 EUR
500+1.78 EUR
1000+1.67 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SISS80DN-T1-GE3 SISS80DN-T1-GE3 Vishay siss80dn.pdf Trans MOSFET N-CH 20V 58.3A 8-Pin PowerPAK 1212-S EP T/R
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SISS80DN-T1-GE3 siss80dn.pdf
SISS80DN-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 169A; Idm: 300A
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 42W
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 300A
Gate charge: 122nC
Technology: TrenchFET®
Drain current: 169A
Kind of channel: enhancement
Drain-source voltage: 20V
Gate-source voltage: -8...12V
On-state resistance: 3mΩ
auf Bestellung 5784 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
27+3.17 EUR
41+2.11 EUR
48+1.81 EUR
75+1.54 EUR
100+1.46 EUR
500+1.23 EUR
Mindestbestellmenge: 27 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SISS80DN-T1-GE3 siss80dn.pdf
SISS80DN-T1-GE3
Hersteller: Vishay Semiconductors
MOSFETs N-Channel 20V (D-S)
auf Bestellung 1505 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+4.96 EUR
10+3.19 EUR
100+2.2 EUR
500+1.77 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SISS80DN-T1-GE3 siss80dn.pdf
SISS80DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 58.3A/210A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58.3A (Ta), 210A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 10 V
auf Bestellung 8283 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.05 EUR
10+3.25 EUR
100+2.23 EUR
500+1.78 EUR
1000+1.67 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SISS80DN-T1-GE3 siss80dn.pdf
SISS80DN-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 20V 58.3A 8-Pin PowerPAK 1212-S EP T/R
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH