SiUD412ED-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 12V 500MA PPAK 0806
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 500mA, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 0806
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 0.71 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 6 V
auf Bestellung 117000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.22 EUR |
| 6000+ | 0.21 EUR |
| 9000+ | 0.18 EUR |
| 75000+ | 0.15 EUR |
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Technische Details SiUD412ED-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 12V 500MA PPAK 0806, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 0806, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Tc), Rds On (Max) @ Id, Vgs: 340mOhm @ 500mA, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: PowerPAK® 0806, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 0.71 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 6 V.
Weitere Produktangebote SiUD412ED-T1-GE3 nach Preis ab 0.2 EUR bis 1.2 EUR
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SiUD412ED-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET 12V Vds 5V Vgs PowerPAK 0806 |
auf Bestellung 5750 Stücke: Lieferzeit 14-28 Tag (e) |
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SiUD412ED-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 12V 500MA PPAK 0806 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 0806 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 500mA, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: PowerPAK® 0806 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 0.71 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 6 V |
auf Bestellung 123931 Stücke: Lieferzeit 21-28 Tag (e) |
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SIUD412ED-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 12V 0.5A 3-Pin PowerPAK T/R |
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| SiUD412ED-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 500mA; Idm: 1.5A Mounting: SMD Kind of package: reel; tape Power dissipation: 1.25W Polarisation: unipolar Gate charge: 0.71nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 1.5A Drain-source voltage: 12V Drain current: 0.5A On-state resistance: 2.5Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| SiUD412ED-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 500mA; Idm: 1.5A Mounting: SMD Kind of package: reel; tape Power dissipation: 1.25W Polarisation: unipolar Gate charge: 0.71nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 1.5A Drain-source voltage: 12V Drain current: 0.5A On-state resistance: 2.5Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |