SiUD412ED-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 12V 500MA PPAK 0806
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 500mA, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 0806
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 0.71 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 6 V
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3000+ | 0.14 EUR |
9000+ | 0.12 EUR |
75000+ | 0.10 EUR |
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Technische Details SiUD412ED-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 12V 500MA PPAK 0806, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 0806, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Tc), Rds On (Max) @ Id, Vgs: 340mOhm @ 500mA, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: PowerPAK® 0806, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 0.71 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 6 V.
Weitere Produktangebote SiUD412ED-T1-GE3 nach Preis ab 0.13 EUR bis 0.79 EUR
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SiUD412ED-T1-GE3 | Hersteller : Vishay / Siliconix |
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auf Bestellung 5750 Stücke: Lieferzeit 10-14 Tag (e) |
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SiUD412ED-T1-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® 0806 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 500mA, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: PowerPAK® 0806 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 0.71 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 6 V |
auf Bestellung 98041 Stücke: Lieferzeit 10-14 Tag (e) |
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SIUD412ED-T1-GE3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SiUD412ED-T1-GE3 | Hersteller : VISHAY |
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Produkt ist nicht verfügbar |