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SiUD412ED-T1-GE3

SiUD412ED-T1-GE3 Vishay Siliconix

siud412ed.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 500MA PPAK 0806
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 500mA, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 0806
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 0.71 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 6 V
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
9000+0.12 EUR
75000+0.10 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SiUD412ED-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 12V 500MA PPAK 0806, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 0806, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Tc), Rds On (Max) @ Id, Vgs: 340mOhm @ 500mA, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: PowerPAK® 0806, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 0.71 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 6 V.

Weitere Produktangebote SiUD412ED-T1-GE3 nach Preis ab 0.13 EUR bis 0.79 EUR

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SiUD412ED-T1-GE3 SiUD412ED-T1-GE3 Hersteller : Vishay / Siliconix siud412ed.pdf MOSFET 12V Vds 5V Vgs PowerPAK 0806
auf Bestellung 5750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.79 EUR
10+0.59 EUR
100+0.33 EUR
500+0.22 EUR
1000+0.17 EUR
3000+0.15 EUR
6000+0.13 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SiUD412ED-T1-GE3 SiUD412ED-T1-GE3 Hersteller : Vishay Siliconix siud412ed.pdf Description: MOSFET N-CH 12V 500MA PPAK 0806
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 500mA, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 0806
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 0.71 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 6 V
auf Bestellung 98041 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
32+0.55 EUR
100+0.28 EUR
500+0.23 EUR
1000+0.17 EUR
Mindestbestellmenge: 23
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SIUD412ED-T1-GE3 SIUD412ED-T1-GE3 Hersteller : Vishay siud412ed.pdf Trans MOSFET N-CH 12V 0.5A 3-Pin PowerPAK T/R
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SiUD412ED-T1-GE3 Hersteller : VISHAY siud412ed.pdf SIUD412ED-T1-GE3 SMD N channel transistors
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