SIZ250DT-T1-GE3

SIZ250DT-T1-GE3

SIZ250DT-T1-GE3

Hersteller: Vishay
Trans MOSFET N-CH 60V 14A 8-Pin PowerPAIR EP
siz250dt.pdf
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Technische Details SIZ250DT-T1-GE3

Description: MOSFET DUAL N-CH 60-V POWERPAIR, Manufacturer: Vishay Siliconix, Packaging: Tape & Reel (TR), Part Status: Active, FET Type: 2 N-Channel (Dual), FET Feature: Standard, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc), Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, Input Capacitance (Ciss) (Max) @ Vds: 840pF, 790pF @ 30V, Power - Max: 4.3W (Ta), 33W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Supplier Device Package: 8-PowerPair® (3.3x3.3), Base Part Number: SIZ250.

Preis SIZ250DT-T1-GE3 ab 0 EUR bis 0 EUR

SIZ250DT-T1-GE3
SIZ250DT-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET DUAL N-CHANNEL 60-V PowerPAIR 3 x 3S
siz250dt-1766731.pdf
auf Bestellung 17695 Stücke
Lieferzeit 14-28 Tag (e)
SIZ250DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CH 60-V POWERPAIR
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 840pF, 790pF @ 30V
Power - Max: 4.3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Base Part Number: SIZ250
siz250dt.pdf
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
SIZ250DT-T1-GE3
SIZ250DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CH 60-V POWERPAIR
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 840pF, 790pF @ 30V
Power - Max: 4.3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Base Part Number: SIZ250
siz250dt.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIZ250DT-T1-GE3
SIZ250DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CH 60-V POWERPAIR
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 840pF, 790pF @ 30V
Power - Max: 4.3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Base Part Number: SIZ250
siz250dt.pdf
auf Bestellung 1882 Stücke
Lieferzeit 21-28 Tag (e)