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SIZ250DT-T1-GE3

SIZ250DT-T1-GE3 Vishay Semiconductors


siz250dt.pdf Hersteller: Vishay Semiconductors
MOSFET DUAL N-CHANNEL 60-V PowerPAIR 3 x 3S
auf Bestellung 34726 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
19+2.81 EUR
23+ 2.3 EUR
100+ 1.79 EUR
500+ 1.51 EUR
1000+ 1.23 EUR
3000+ 1.16 EUR
6000+ 1.15 EUR
Mindestbestellmenge: 19
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Technische Details SIZ250DT-T1-GE3 Vishay Semiconductors

Description: MOSFET DUAL N-CH 60-V POWERPAIR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4.3W (Ta), 33W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V, 790pF @ 30V, Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-PowerPair® (3.3x3.3), Part Status: Active.

Weitere Produktangebote SIZ250DT-T1-GE3 nach Preis ab 1.81 EUR bis 3.15 EUR

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SIZ250DT-T1-GE3 SIZ250DT-T1-GE3 Hersteller : Vishay Siliconix siz250dt.pdf Description: MOSFET DUAL N-CH 60-V POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V, 790pF @ 30V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Part Status: Active
auf Bestellung 660 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.15 EUR
10+ 2.8 EUR
100+ 2.19 EUR
500+ 1.81 EUR
Mindestbestellmenge: 9
SIZ250DT-T1-GE3 Hersteller : VISHAY siz250dt.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 38A; Idm: 80A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 38A
Pulsed drain current: 80A
Power dissipation: 33W
Gate-source voltage: ±20V
On-state resistance: 18.87/18.11mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIZ250DT-T1-GE3 SIZ250DT-T1-GE3 Hersteller : Vishay Siliconix siz250dt.pdf Description: MOSFET DUAL N-CH 60-V POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V, 790pF @ 30V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Part Status: Active
Produkt ist nicht verfügbar
SIZ250DT-T1-GE3 Hersteller : VISHAY siz250dt.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 38A; Idm: 80A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 38A
Pulsed drain current: 80A
Power dissipation: 33W
Gate-source voltage: ±20V
On-state resistance: 18.87/18.11mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar