SPB80N03S2L-05 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 80A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 55A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 110µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 89.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 25 V
Description: MOSFET N-CH 30V 80A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 55A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 110µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 89.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 25 V
auf Bestellung 75780 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
799+ | 0.91 EUR |
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Technische Details SPB80N03S2L-05 Infineon Technologies
Description: MOSFET N-CH 30V 80A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 4.9mOhm @ 55A, 10V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 2V @ 110µA, Supplier Device Package: PG-TO263-3-2, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 89.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 25 V.
Weitere Produktangebote SPB80N03S2L-05 nach Preis ab 0.91 EUR bis 0.91 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SPB80N03S2L05 | Hersteller : Infineon Technologies |
Description: 80A, 30V, N-CHANNEL, MOSFET Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 55A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 110µA Supplier Device Package: PG-TO263-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 89.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 25 V |
auf Bestellung 72559 Stücke: Lieferzeit 21-28 Tag (e) |
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SPB80N03S2L-05 | Hersteller : INFINEON | 07+ TO-263/D2-PAK |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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SPB80N03S2L-05 | Hersteller : INFINEON | TO-263/D2-PAK |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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SPB80N03S2L-05 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 80A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 55A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 110µA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 89.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 25 V |
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