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SPB80N03S2L-05

SPB80N03S2L-05 Infineon Technologies

SP%28B%2CI%2CP%2980N03S2L-05.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 80A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 55A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 110µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 89.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 25 V
auf Bestellung 75780 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
545+0.83 EUR
Mindestbestellmenge: 545 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SPB80N03S2L-05 Infineon Technologies

Description: MOSFET N-CH 30V 80A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 4.9mOhm @ 55A, 10V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 2V @ 110µA, Supplier Device Package: PG-TO263-3-2, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 89.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 25 V.

Weitere Produktangebote SPB80N03S2L-05 nach Preis ab 0.83 EUR bis 0.83 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
SPB80N03S2L05 SPB80N03S2L05 Infineon Technologies spp_b_80n03s2l-05_1.pdf?t.download=true&u=5oefqw Description: 80A, 30V, N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 55A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 110µA
Supplier Device Package: PG-TO263-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 89.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 25 V
auf Bestellung 72559 Stücke:
Lieferzeit 10-14 Tag (e)
545+0.83 EUR
Mindestbestellmenge: 545 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SPB80N03S2L-05 INFINEON SP%28B%2CI%2CP%2980N03S2L-05.pdf 07+ TO-263/D2-PAK
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SPB80N03S2L05 spp_b_80n03s2l-05_1.pdf?t.download=true&u=5oefqw
SPB80N03S2L05
Hersteller: Infineon Technologies
Description: 80A, 30V, N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 55A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 110µA
Supplier Device Package: PG-TO263-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 89.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 25 V
auf Bestellung 72559 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
545+0.83 EUR
Mindestbestellmenge: 545 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SPB80N03S2L-05 SP%28B%2CI%2CP%2980N03S2L-05.pdf
Hersteller: INFINEON
07+ TO-263/D2-PAK
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH