SQ2301ES-T1_GE3 VISHAY
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -2.2A
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -2.2A
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
179+ | 0.4 EUR |
199+ | 0.36 EUR |
261+ | 0.27 EUR |
276+ | 0.26 EUR |
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Technische Details SQ2301ES-T1_GE3 VISHAY
Description: MOSFET P-CH 20V 3.9A TO236, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TA), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V, Power Dissipation (Max): 3W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: TO-236 (SOT-23), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQ2301ES-T1_GE3 nach Preis ab 0.26 EUR bis 1.23 EUR
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SQ2301ES-T1_GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -2.2A On-state resistance: 0.12Ω Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Gate charge: 8nC Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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SQ2301ES-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 3.9A TO236 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TA) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V Power Dissipation (Max): 3W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TO-236 (SOT-23) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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SQ2301ES-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 3.9A TO236 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TA) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V Power Dissipation (Max): 3W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TO-236 (SOT-23) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3460 Stücke: Lieferzeit 21-28 Tag (e) |
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SQ2301ES-T1_GE3 | Hersteller : Vishay / Siliconix | MOSFET P-Channel 20V AEC-Q101 Qualified |
auf Bestellung 23957 Stücke: Lieferzeit 14-28 Tag (e) |
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SQ2301ES-T1-GE3 |
auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) |
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SQ2301ES-T1-GE3 | Hersteller : Vishay / Siliconix | MOSFET RECOMMENDED ALT SQ2301ES-T1_GE3 |
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