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SQ2301ES-T1_GE3

SQ2301ES-T1_GE3 Vishay Siliconix

sq2301es.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.9A TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-236 (SOT-23)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.3 EUR
6000+0.28 EUR
9000+0.26 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SQ2301ES-T1_GE3 Vishay Siliconix

Description: MOSFET P-CH 20V 3.9A TO236, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TA), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V, Power Dissipation (Max): 3W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: TO-236 (SOT-23), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote SQ2301ES-T1_GE3 nach Preis ab 0.26 EUR bis 1.27 EUR

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SQ2301ES-T1_GE3 SQ2301ES-T1_GE3 VISHAY SQ2301ES.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Drain current: -2.2A
Gate charge: 8nC
On-state resistance: 0.12Ω
Power dissipation: 1W
Gate-source voltage: ±8V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 804 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
137+0.52 EUR
152+0.47 EUR
202+0.35 EUR
250+0.3 EUR
500+0.27 EUR
Mindestbestellmenge: 117 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQ2301ES-T1_GE3 SQ2301ES-T1_GE3 Vishay / Siliconix sq2301es.pdf MOSFETs P-Channel 20V AEC-Q101 Qualified
auf Bestellung 14276 Stücke:
Lieferzeit 10-14 Tag (e)
3+0.95 EUR
10+0.72 EUR
100+0.48 EUR
500+0.37 EUR
1000+0.33 EUR
3000+0.28 EUR
6000+0.26 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQ2301ES-T1_GE3 SQ2301ES-T1_GE3 Vishay Siliconix sq2301es.pdf Description: MOSFET P-CH 20V 3.9A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-236 (SOT-23)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11779 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.27 EUR
23+0.79 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQ2301ES-T1-GE3
auf Bestellung 24000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SQ2301ES-T1_GE3 SQ2301ES.pdf
SQ2301ES-T1_GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Drain current: -2.2A
Gate charge: 8nC
On-state resistance: 0.12Ω
Power dissipation: 1W
Gate-source voltage: ±8V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 804 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
117+0.61 EUR
137+0.52 EUR
152+0.47 EUR
202+0.35 EUR
250+0.3 EUR
500+0.27 EUR
Mindestbestellmenge: 117 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQ2301ES-T1_GE3 sq2301es.pdf
SQ2301ES-T1_GE3
Hersteller: Vishay / Siliconix
MOSFETs P-Channel 20V AEC-Q101 Qualified
auf Bestellung 14276 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+0.95 EUR
10+0.72 EUR
100+0.48 EUR
500+0.37 EUR
1000+0.33 EUR
3000+0.28 EUR
6000+0.26 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQ2301ES-T1_GE3 sq2301es.pdf
SQ2301ES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.9A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-236 (SOT-23)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11779 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
14+1.27 EUR
23+0.79 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQ2301ES-T1-GE3
auf Bestellung 24000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH