SQ2301ES-T1_GE3

SQ2301ES-T1_GE3

Hersteller: VISHAY
Material: SQ2301ES-T1-GE3 SMD P channel transistors
sq2301es.pdf sq2301es.pdf
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Technische Details SQ2301ES-T1_GE3

Description: MOSFET P-CH 20V 3.9A TO236, Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V, Vgs (Max): ±8V, Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc), Drain to Source Voltage (Vdss): 20V, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Manufacturer: Vishay Siliconix, Base Part Number: SQ2301, Package / Case: TO-236-3, SC-59, SOT-23-3, Supplier Device Package: TO-236 (SOT-23), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TA), Power Dissipation (Max): 3W (Tc).

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SQ2301ES-T1-GE3
Hersteller:

24000 Stücke
SQ2301ES-T1_GE3
Hersteller: VISHAY
Material: SQ2301ES-T1-GE3 SMD P channel transistors
sq2301es.pdf sq2301es.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ2301ES-T1_GE3
SQ2301ES-T1_GE3
Hersteller: Vishay / Siliconix
MOSFET P-Channel 20V AEC-Q101 Qualified
sq2301es-1764983.pdf
auf Bestellung 32735 Stücke
Lieferzeit 14-28 Tag (e)
SQ2301ES-T1_GE3
SQ2301ES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.9A TO236
Base Part Number: SQ2301
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236 (SOT-23)
Mounting Type: Surface Mount
Power Dissipation (Max): 3W (Tc)
Operating Temperature: -55°C ~ 175°C (TA)
Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
sq2301es.pdf
auf Bestellung 4831 Stücke
Lieferzeit 21-28 Tag (e)
SQ2301ES-T1_GE3
SQ2301ES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.9A TO236
Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQ2301
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236 (SOT-23)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TA)
Power Dissipation (Max): 3W (Tc)
sq2301es.pdf
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SQ2301ES-T1_GE3
SQ2301ES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.9A TO236
Base Part Number: SQ2301
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236 (SOT-23)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TA)
Power Dissipation (Max): 3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
sq2301es.pdf
auf Bestellung 4515 Stücke
Lieferzeit 21-28 Tag (e)