SQ2301ES-T1_GE3
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Technische Details SQ2301ES-T1_GE3
Description: MOSFET P-CH 20V 3.9A TO236, Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V, Vgs (Max): ±8V, Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc), Drain to Source Voltage (Vdss): 20V, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Manufacturer: Vishay Siliconix, Base Part Number: SQ2301, Package / Case: TO-236-3, SC-59, SOT-23-3, Supplier Device Package: TO-236 (SOT-23), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TA), Power Dissipation (Max): 3W (Tc).
Preis SQ2301ES-T1_GE3 ab 0 EUR bis 0 EUR
SQ2301ES-T1-GE3 Hersteller: |
24000 Stücke |
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SQ2301ES-T1_GE3 Hersteller: VISHAY Material: SQ2301ES-T1-GE3 SMD P channel transistors ![]() ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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SQ2301ES-T1_GE3 Hersteller: Vishay / Siliconix MOSFET P-Channel 20V AEC-Q101 Qualified ![]() |
auf Bestellung 32735 Stücke ![]() Lieferzeit 14-28 Tag (e) |
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SQ2301ES-T1_GE3 Hersteller: Vishay Siliconix Description: MOSFET P-CH 20V 3.9A TO236 Base Part Number: SQ2301 Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236 (SOT-23) Mounting Type: Surface Mount Power Dissipation (Max): 3W (Tc) Operating Temperature: -55°C ~ 175°C (TA) Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active ![]() |
auf Bestellung 4831 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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SQ2301ES-T1_GE3 Hersteller: Vishay Siliconix Description: MOSFET P-CH 20V 3.9A TO236 Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Base Part Number: SQ2301 Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236 (SOT-23) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TA) Power Dissipation (Max): 3W (Tc) ![]() |
auf Bestellung 3000 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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SQ2301ES-T1_GE3 Hersteller: Vishay Siliconix Description: MOSFET P-CH 20V 3.9A TO236 Base Part Number: SQ2301 Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236 (SOT-23) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TA) Power Dissipation (Max): 3W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix ![]() |
auf Bestellung 4515 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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