Produkte > VISHAY > SQ2301ES-T1_GE3
SQ2301ES-T1_GE3

SQ2301ES-T1_GE3 VISHAY

SQ2301ES.pdf Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -2.2A
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
179+0.4 EUR
199+ 0.36 EUR
261+ 0.27 EUR
276+ 0.26 EUR
Mindestbestellmenge: 179
Produktrezensionen
Produktbewertung abgeben

Technische Details SQ2301ES-T1_GE3 VISHAY

Description: MOSFET P-CH 20V 3.9A TO236, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TA), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V, Power Dissipation (Max): 3W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: TO-236 (SOT-23), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote SQ2301ES-T1_GE3 nach Preis ab 0.26 EUR bis 1.23 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SQ2301ES-T1_GE3 SQ2301ES-T1_GE3 Hersteller : VISHAY SQ2301ES.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -2.2A
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
179+0.4 EUR
199+ 0.36 EUR
261+ 0.27 EUR
276+ 0.26 EUR
Mindestbestellmenge: 179
SQ2301ES-T1_GE3 SQ2301ES-T1_GE3 Hersteller : Vishay Siliconix sq2301es.pdf Description: MOSFET P-CH 20V 3.9A TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-236 (SOT-23)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.42 EUR
Mindestbestellmenge: 3000
SQ2301ES-T1_GE3 SQ2301ES-T1_GE3 Hersteller : Vishay Siliconix sq2301es.pdf Description: MOSFET P-CH 20V 3.9A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-236 (SOT-23)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3460 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
22+1.22 EUR
25+ 1.05 EUR
100+ 0.73 EUR
500+ 0.57 EUR
1000+ 0.46 EUR
Mindestbestellmenge: 22
SQ2301ES-T1_GE3 SQ2301ES-T1_GE3 Hersteller : Vishay / Siliconix sq2301es.pdf MOSFET P-Channel 20V AEC-Q101 Qualified
auf Bestellung 23957 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
43+1.23 EUR
51+ 1.02 EUR
100+ 0.74 EUR
500+ 0.58 EUR
1000+ 0.47 EUR
3000+ 0.4 EUR
9000+ 0.37 EUR
Mindestbestellmenge: 43
SQ2301ES-T1-GE3
auf Bestellung 24000 Stücke:
Lieferzeit 21-28 Tag (e)
SQ2301ES-T1-GE3 SQ2301ES-T1-GE3 Hersteller : Vishay / Siliconix MOSFET RECOMMENDED ALT SQ2301ES-T1_GE3
Produkt ist nicht verfügbar