SQ2301ES-T1_GE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Technische Details SQ2301ES-T1_GE3
Description: MOSFET P-CH 20V 3.9A TO236, Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V, Vgs (Max): ±8V, Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc), Drain to Source Voltage (Vdss): 20V, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Manufacturer: Vishay Siliconix, Base Part Number: SQ2301, Package / Case: TO-236-3, SC-59, SOT-23-3, Supplier Device Package: TO-236 (SOT-23), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TA), Power Dissipation (Max): 3W (Tc).
Preis SQ2301ES-T1_GE3 ab 0 EUR bis 0 EUR
|
SQ2301ES-T1-GE3 Hersteller: |
24000 Stücke |
|
|
|
SQ2301ES-T1_GE3 Hersteller: VISHAY Material: SQ2301ES-T1-GE3 SMD P channel transistors 
|
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|
|
 Hersteller: Vishay / Siliconix MOSFET P-Channel 20V AEC-Q101 Qualified
|
auf Bestellung 32735 Stücke  Lieferzeit 14-28 Tag (e) |
|
|
 Hersteller: Vishay Siliconix Description: MOSFET P-CH 20V 3.9A TO236 Base Part Number: SQ2301 Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236 (SOT-23) Mounting Type: Surface Mount Power Dissipation (Max): 3W (Tc) Operating Temperature: -55°C ~ 175°C (TA) Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active
|
auf Bestellung 4831 Stücke Lieferzeit 21-28 Tag (e) |
|
|
 Hersteller: Vishay Siliconix Description: MOSFET P-CH 20V 3.9A TO236 Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Base Part Number: SQ2301 Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236 (SOT-23) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TA) Power Dissipation (Max): 3W (Tc)
|
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
|
|
|
Hersteller: Vishay Siliconix Description: MOSFET P-CH 20V 3.9A TO236 Base Part Number: SQ2301 Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236 (SOT-23) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TA) Power Dissipation (Max): 3W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix
|
auf Bestellung 4515 Stücke Lieferzeit 21-28 Tag (e) |
|
|