SQ2303ES-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 30V 2.5A TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.28 EUR |
| 6000+ | 0.26 EUR |
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Technische Details SQ2303ES-T1_GE3 Vishay Siliconix
Description: MOSFET P-CH 30V 2.5A TO236, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V, Power Dissipation (Max): 1.9W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SQ2303ES-T1_GE3 nach Preis ab 0.22 EUR bis 0.81 EUR
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SQ2303ES-T1_GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.5A; Idm: -10A Case: SOT23 Drain-source voltage: -30V Drain current: -2.5A On-state resistance: 370mΩ Type of transistor: P-MOSFET Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 6.8nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -10A Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2900 Stücke: Lieferzeit 7-14 Tag (e) |
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SQ2303ES-T1_GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.5A; Idm: -10A Case: SOT23 Drain-source voltage: -30V Drain current: -2.5A On-state resistance: 370mΩ Type of transistor: P-MOSFET Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 6.8nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -10A Mounting: SMD |
auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ2303ES-T1_GE3 | Hersteller : Vishay Semiconductors |
MOSFETs P-Channel 30V AEC-Q101 Qualified |
auf Bestellung 168050 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ2303ES-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 2.5A TO236 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V Power Dissipation (Max): 1.9W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 12988 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ2303ES-T1_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQ2303ES-T1_GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 2.5 A, 0.13 ohm, TO-236, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 1.9W Bauform - Transistor: TO-236 Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.13ohm SVHC: No SVHC (07-Nov-2024) |
auf Bestellung 5050 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ2303ES-T1_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQ2303ES-T1_GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 2.5 A, 0.13 ohm, TO-236, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 1.9W Bauform - Transistor: TO-236 Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.13ohm SVHC: To Be Advised |
auf Bestellung 8235 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ2303ES-T1_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 2.5A Automotive 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |