SQ2303ES-T1_GE3

SQ2303ES-T1_GE3

Hersteller: Vishay / Siliconix
MOSFET P-Channel 30V AEC-Q101 Qualified
sq2303es-534713.pdf
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auf Bestellung 10800 Stücke
Lieferzeit 14-28 Tag (e)

Technische Details SQ2303ES-T1_GE3

Description: MOSFET P-CHAN 30V SOT23, Base Part Number: SQ2303, Package / Case: TO-236-3, SC-59, SOT-23-3, Supplier Device Package: TO-236 (SOT-23), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 1.9W (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc), Drain to Source Voltage (Vdss): 30V, Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Part Status: Active, Packaging: Tape & Reel (TR).

Preis SQ2303ES-T1_GE3 ab 0 EUR bis 0 EUR

SQ2303ES-T1_GE3
SQ2303ES-T1_GE3
Hersteller: Vishay Semiconductors
MOSFET P-Channel 30V AEC-Q101 Qualified
VISH_S_A0010613177_1-2571231.pdf
auf Bestellung 300 Stücke
Lieferzeit 14-28 Tag (e)
SQ2303ES-T1_GE3
SQ2303ES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHAN 30V SOT23
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SQ2303
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236 (SOT-23)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.9W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
sq2303es.pdf
auf Bestellung 6596 Stücke
Lieferzeit 21-28 Tag (e)
SQ2303ES-T1_GE3
SQ2303ES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHAN 30V SOT23
Base Part Number: SQ2303
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236 (SOT-23)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.9W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
sq2303es.pdf
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)