SQ2303ES-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 30V 2.5A TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.41 EUR |
| 6000+ | 0.39 EUR |
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Technische Details SQ2303ES-T1_GE3 Vishay Siliconix
Description: MOSFET P-CH 30V 2.5A TO236, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V, Power Dissipation (Max): 1.9W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SQ2303ES-T1_GE3 nach Preis ab 0.37 EUR bis 1.2 EUR
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SQ2303ES-T1_GE3 | Hersteller : Vishay Semiconductors |
MOSFET P-Channel 30V AEC-Q101 Qualified |
auf Bestellung 171914 Stücke: Lieferzeit 14-28 Tag (e) |
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SQ2303ES-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 2.5A TO236 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V Power Dissipation (Max): 1.9W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 12988 Stücke: Lieferzeit 21-28 Tag (e) |
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SQ2303ES-T1_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQ2303ES-T1_GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 2.5 A, 0.13 ohm, TO-236, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 1.9W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.13ohm |
auf Bestellung 10270 Stücke: Lieferzeit 14-21 Tag (e) |
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| SQ2303ES-T1_GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.5A; Idm: -10A Mounting: SMD Case: SOT23 Kind of package: reel; tape Pulsed drain current: -10A Power dissipation: 1.9W Gate charge: 6.8nC Polarisation: unipolar Technology: TrenchFET® Drain current: -2.5A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 370mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQ2303ES-T1_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 2.5A Automotive 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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| SQ2303ES-T1_GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.5A; Idm: -10A Mounting: SMD Case: SOT23 Kind of package: reel; tape Pulsed drain current: -10A Power dissipation: 1.9W Gate charge: 6.8nC Polarisation: unipolar Technology: TrenchFET® Drain current: -2.5A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 370mΩ |
Produkt ist nicht verfügbar |