SQ2303ES-T1_GE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 10800 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 10800 Stücke
Lieferzeit 14-28 Tag (e)
Technische Details SQ2303ES-T1_GE3
Description: MOSFET P-CHAN 30V SOT23, Base Part Number: SQ2303, Package / Case: TO-236-3, SC-59, SOT-23-3, Supplier Device Package: TO-236 (SOT-23), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 1.9W (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc), Drain to Source Voltage (Vdss): 30V, Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Part Status: Active, Packaging: Tape & Reel (TR).
Preis SQ2303ES-T1_GE3 ab 0 EUR bis 0 EUR
 Hersteller: Vishay Semiconductors MOSFET P-Channel 30V AEC-Q101 Qualified 
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auf Bestellung 300 Stücke Lieferzeit 14-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET P-CHAN 30V SOT23 Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Cut Tape (CT) Base Part Number: SQ2303 Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236 (SOT-23) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 1.9W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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auf Bestellung 6596 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET P-CHAN 30V SOT23 Base Part Number: SQ2303 Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236 (SOT-23) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 1.9W (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drain to Source Voltage (Vdss): 30V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR)
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auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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