SQ2303ES-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.5A TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 25 V
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 3000+ | 0.28 EUR |
| 6000+ | 0.26 EUR |
| 9000+ | 0.24 EUR |
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Technische Details SQ2303ES-T1_GE3 Vishay Siliconix
Description: VISHAY - SQ2303ES-T1_GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 2.5 A, 0.17 ohm, TO-236, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 2.5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 2V, euEccn: NLR, Verlustleistung: 1.9W, Bauform - Transistor: TO-236, Anzahl der Pins: 3Pin(s), Produktpalette: TrenchFET, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.17ohm, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote SQ2303ES-T1_GE3 nach Preis ab 0.22 EUR bis 1.53 EUR
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SQ2303ES-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.5A; Idm: -10A Polarisation: unipolar Kind of channel: enhancement Case: SOT23 Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Technology: TrenchFET® Drain-source voltage: -30V Pulsed drain current: -10A Drain current: -2.5A Gate charge: 6.8nC On-state resistance: 370mΩ Power dissipation: 1.9W Gate-source voltage: ±20V |
auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ2303ES-T1_GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 2.5A TO236 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V Power Dissipation (Max): 1.9W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 9965 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ2303ES-T1_GE3 | Vishay Semiconductors |
MOSFETs P-Channel 30V AEC-Q101 Qualified |
auf Bestellung 144444 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ2303ES-T1_GE3 | VISHAY |
Description: VISHAY - SQ2303ES-T1_GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 2.5 A, 0.17 ohm, TO-236, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 1.9W Bauform - Transistor: TO-236 Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.17ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 7624 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SQ2303ES-T1_GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.5A; Idm: -10A
Polarisation: unipolar
Kind of channel: enhancement
Case: SOT23
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: -30V
Pulsed drain current: -10A
Drain current: -2.5A
Gate charge: 6.8nC
On-state resistance: 370mΩ
Power dissipation: 1.9W
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.5A; Idm: -10A
Polarisation: unipolar
Kind of channel: enhancement
Case: SOT23
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: -30V
Pulsed drain current: -10A
Drain current: -2.5A
Gate charge: 6.8nC
On-state resistance: 370mΩ
Power dissipation: 1.9W
Gate-source voltage: ±20V
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 147+ | 0.49 EUR |
| 165+ | 0.43 EUR |
| 242+ | 0.3 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.22 EUR |
| SQ2303ES-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.5A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 2.5A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 9965 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 0.69 EUR |
| 33+ | 0.54 EUR |
| 100+ | 0.44 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.33 EUR |
| SQ2303ES-T1_GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs P-Channel 30V AEC-Q101 Qualified
MOSFETs P-Channel 30V AEC-Q101 Qualified
auf Bestellung 144444 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 1.53 EUR |
| 10+ | 1.09 EUR |
| 100+ | 0.68 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.41 EUR |
| 3000+ | 0.35 EUR |
| SQ2303ES-T1_GE3 |
|
Hersteller: VISHAY
Description: VISHAY - SQ2303ES-T1_GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 2.5 A, 0.17 ohm, TO-236, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 2.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 1.9W
Bauform - Transistor: TO-236
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.17ohm
SVHC: No SVHC (25-Jun-2025)
Description: VISHAY - SQ2303ES-T1_GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 2.5 A, 0.17 ohm, TO-236, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 2.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 1.9W
Bauform - Transistor: TO-236
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.17ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 7624 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH