SQ2398ES-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 1.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 219000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.37 EUR |
6000+ | 0.35 EUR |
9000+ | 0.33 EUR |
30000+ | 0.32 EUR |
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Technische Details SQ2398ES-T1_GE3 Vishay Siliconix
Description: MOSFET N-CH 100V 1.6A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V, Power Dissipation (Max): 2W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQ2398ES-T1_GE3 nach Preis ab 0.42 EUR bis 1.54 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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SQ2398ES-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 1.6A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 221646 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ2398ES-T1_GE3 | Hersteller : Vishay Semiconductors | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified |
auf Bestellung 113466 Stücke: Lieferzeit 577-591 Tag (e) |
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