SQ3418EEV-T1-GE3

SQ3418EEV-T1-GE3

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sq3418ee.pdf
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Technische Details SQ3418EEV-T1-GE3

Description: MOSFET N-CH 40V 8A 6TSOP, Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 6-TSOP, Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Drain to Source Voltage (Vdss): 40V, FET Type: MOSFET N-Channel, Metal Oxide, Power - Max: 5W.

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SQ3418EEV-T1-GE3
SQ3418EEV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 8A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET N-Channel, Metal Oxide
Power - Max: 5W
sq3418ee.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ3418EEV-T1-GE3
SQ3418EEV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 8A 6TSOP
Supplier Device Package: 6-TSOP
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 20V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: MOSFET N-Channel, Metal Oxide
sq3418ee.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ3418EEV-T1-GE3
SQ3418EEV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 8A 6TSOP
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET N-Channel, Metal Oxide
Operating Temperature: -55°C ~ 175°C (TJ)
sq3418ee.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen