Produkte > SQ3

Description: N-CHANNEL 30-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1005 pF @ 15 V

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.69 EUR
6000+	0.65 EUR

Mindestbestellmenge: 3000

SQ3410EV-T1_BE3

Description: N-CHANNEL 30-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1005 pF @ 15 V

auf Bestellung 8303 Stücke:

Lieferzeit 21-28 Tag (e)

15+	1.79 EUR
17+	1.57 EUR
100+	1.08 EUR
500+	0.91 EUR
1000+	0.77 EUR

Mindestbestellmenge: 15

SQ3410EV-T1_GE3

Description: MOSFET N-CH 30V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1005 pF @ 15 V

Produkt ist nicht verfügbar

SQ3410EV-T1_GE3

MOSFET 30V 8A 5W AEC-Q101 Qualified

auf Bestellung 18657 Stücke:

Lieferzeit 14-28 Tag (e)

30+	1.77 EUR
34+	1.56 EUR
100+	1.06 EUR
500+	0.89 EUR
1000+	0.76 EUR
3000+	0.66 EUR
6000+	0.64 EUR

Mindestbestellmenge: 30

SQ3410EV-T1_GE3

Trans MOSFET N-CH 30V 8A Automotive 6-Pin TSOP T/R

Produkt ist nicht verfügbar

SQ3410EV-T1_GE3

Description: MOSFET N-CH 30V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1005 pF @ 15 V

Produkt ist nicht verfügbar

SQ3410EV-T1_GE3

Trans MOSFET N-CH 30V 8A Automotive 6-Pin TSOP

Produkt ist nicht verfügbar

SQ3410EV-T1_GE3

Trans MOSFET N-CH 30V 8A Automotive 6-Pin TSOP T/R

Produkt ist nicht verfügbar

SQ3418AEEV-T1_BE3

Description: MOSFET N-CH 40V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 20 V

Produkt ist nicht verfügbar

SQ3418AEEV-T1_BE3

Description: MOSFET N-CH 40V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 20 V

Produkt ist nicht verfügbar

SQ3418AEEV-T1_BE3

MOSFET N-CHANNEL 40V (D-S)

auf Bestellung 36100 Stücke:

Lieferzeit 14-28 Tag (e)

25+	2.15 EUR
30+	1.76 EUR
100+	1.37 EUR
500+	1.16 EUR
1000+	0.95 EUR
3000+	0.89 EUR
6000+	0.85 EUR

Mindestbestellmenge: 25

SQ3418AEEV-T1_GE3

Description: VISHAY - SQ3418AEEV-T1_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 8 A, 0.026 ohm, TSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 5W
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.026ohm
SVHC: No SVHC (10-Jun-2022)

auf Bestellung 6500 Stücke:

Lieferzeit 14-21 Tag (e)

SQ3418AEEV-T1_GE3

Trans MOSFET N-CH 40V 8A Automotive 6-Pin TSOP T/R

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

SQ3418AEEV-T1_GE3

MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified

auf Bestellung 7123 Stücke:

Lieferzeit 14-28 Tag (e)

33+	1.62 EUR
38+	1.37 EUR
100+	1.12 EUR
500+	1.02 EUR
1000+	0.91 EUR
3000+	0.85 EUR
6000+	0.84 EUR

Mindestbestellmenge: 33

SQ3418AEEV-T1_GE3

auf Bestellung 6500 Stücke:

Lieferzeit 14-21 Tag (e)

SQ3418EEV-T1-GE3

Description: MOSFET N-CH 40V 8A 6TSOP

Produkt ist nicht verfügbar

SQ3418EEV-T1-GE3

Description: MOSFET N-CH 40V 8A 6TSOP

Produkt ist nicht verfügbar

SQ3418EEV-T1-GE3

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

SQ3418EEV-T1-GE3

Description: MOSFET N-CH 40V 8A 6TSOP

Produkt ist nicht verfügbar

SQ3418EV-T1_BE3

Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 20 V

auf Bestellung 32858 Stücke:

Lieferzeit 21-28 Tag (e)

17+	1.59 EUR
19+	1.37 EUR
100+	0.95 EUR
500+	0.79 EUR
1000+	0.68 EUR

Mindestbestellmenge: 17

SQ3418EV-T1_BE3

Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 20 V

auf Bestellung 30000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.6 EUR
6000+	0.57 EUR
9000+	0.53 EUR
30000+	0.52 EUR

Mindestbestellmenge: 3000

SQ3418EV-T1_GE3

MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified

auf Bestellung 54636 Stücke:

Lieferzeit 14-28 Tag (e)

33+	1.6 EUR
38+	1.4 EUR
100+	0.96 EUR
500+	0.8 EUR
1000+	0.68 EUR
3000+	0.58 EUR
6000+	0.56 EUR

Mindestbestellmenge: 33

SQ3418EV-T1_GE3

Description: MOSFET N-CHANNEL 40V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 20 V

auf Bestellung 35700 Stücke:

Lieferzeit 21-28 Tag (e)

16+	1.64 EUR
19+	1.41 EUR
100+	0.98 EUR
500+	0.82 EUR
1000+	0.69 EUR

Mindestbestellmenge: 16

SQ3418EV-T1_GE3

Description: MOSFET N-CHANNEL 40V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 20 V

auf Bestellung 30000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.62 EUR
6000+	0.59 EUR
9000+	0.54 EUR

Mindestbestellmenge: 3000

SQ3419AEEV-T1_BE3

MOSFET P-CHANNEL 40-V (D-S) 175C MOSFET

auf Bestellung 59940 Stücke:

Lieferzeit 14-28 Tag (e)

32+	1.64 EUR
37+	1.44 EUR
100+	0.98 EUR
500+	0.82 EUR
1000+	0.72 EUR
3000+	0.61 EUR

Mindestbestellmenge: 32

SQ3419AEEV-T1_GE3

Description: MOSFET P-CHANNEL 40V 6.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 20 V
Qualification: AEC-Q101

auf Bestellung 4329 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.62 EUR

Mindestbestellmenge: 3000

SQ3419AEEV-T1_GE3

MOSFET -40V Vds TSOP-6 AEC-Q101 Qualified

auf Bestellung 28874 Stücke:

Lieferzeit 14-28 Tag (e)

33+	1.62 EUR
38+	1.39 EUR
100+	0.98 EUR
500+	0.82 EUR
1000+	0.7 EUR
3000+	0.62 EUR
6000+	0.58 EUR

Mindestbestellmenge: 33

SQ3419AEEV-T1_GE3

Description: MOSFET P-CHANNEL 40V 6.9A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 20 V
Qualification: AEC-Q101

auf Bestellung 6551 Stücke:

Lieferzeit 21-28 Tag (e)

17+	1.61 EUR
19+	1.4 EUR
100+	0.97 EUR
500+	0.81 EUR
1000+	0.69 EUR

Mindestbestellmenge: 17

SQ3419AEEV-T1_GE3

Description: VISHAY - SQ3419AEEV-T1_GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 6.9 A, 0.048 ohm, TSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 6.9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Verlustleistung Pd: 5W
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 5W
Bauform - Transistor: TSOP
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: p-Kanal
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 0.048ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.048ohm
SVHC: No SVHC (10-Jun-2022)

auf Bestellung 5561 Stücke:

Lieferzeit 14-21 Tag (e)

SQ3419AEEV-T1_GE3

Automotive P-Channel 60 V D-S 175 Degree C Mosfet

Produkt ist nicht verfügbar

SQ3419EEV-T1-GE3

Description: MOSFET P-CH 40V 7.4A 6TSOP

auf Bestellung 3419 Stücke:

Lieferzeit 21-28 Tag (e)

SQ3419EEV-T1-GE3

Description: MOSFET P-CH 40V 7.4A 6TSOP

Produkt ist nicht verfügbar

SQ3419EEV-T1-GE3

Trans MOSFET P-CH 40V 7.4A Automotive 6-Pin TSOP T/R

Produkt ist nicht verfügbar

SQ3419EEV-T1-GE3

Description: MOSFET P-CH 40V 7.4A 6TSOP

auf Bestellung 3419 Stücke:

Lieferzeit 21-28 Tag (e)

SQ3419EV-T1_BE3

Description: MOSFET P-CH 40V 6.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 20 V
Qualification: AEC-Q101

auf Bestellung 9000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.6 EUR
6000+	0.56 EUR
9000+	0.52 EUR

Mindestbestellmenge: 3000

SQ3419EV-T1_BE3

Trans MOSFET P-CH 40V 6.9A Automotive 6-Pin TSOP T/R

Produkt ist nicht verfügbar

SQ3419EV-T1_BE3

Description: MOSFET P-CH 40V 6.9A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 20 V
Qualification: AEC-Q101

auf Bestellung 9835 Stücke:

Lieferzeit 21-28 Tag (e)

17+	1.56 EUR
20+	1.36 EUR
100+	0.94 EUR
500+	0.79 EUR

Mindestbestellmenge: 17

SQ3419EV-T1_BE3

MOSFET P-CHANNEL 40V (D-S)

auf Bestellung 33986 Stücke:

Lieferzeit 14-28 Tag (e)

33+	1.6 EUR
38+	1.38 EUR
100+	0.96 EUR
500+	0.8 EUR
1000+	0.68 EUR
3000+	0.6 EUR
6000+	0.56 EUR

Mindestbestellmenge: 33

SQ3419EV-T1_GE3

Description: VISHAY - SQ3419EV-T1_GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 6.9 A, 0.048 ohm, TSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 6.9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 5W
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.048ohm
SVHC: No SVHC (10-Jun-2022)

auf Bestellung 10001 Stücke:

Lieferzeit 14-21 Tag (e)

SQ3419EV-T1_GE3

Trans MOSFET P-CH 40V 6.9A Automotive AEC-Q101 6-Pin TSOP T/R

Produkt ist nicht verfügbar

SQ3419EV-T1_GE3

Trans MOSFET P-CH 40V 6.9A Automotive 6-Pin TSOP T/R

auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)

SQ3419EV-T1_GE3

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -6.9A; Idm: -27A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.9A
Pulsed drain current: -27A
Power dissipation: 1.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry

Produkt ist nicht verfügbar

SQ3419EV-T1_GE3

auf Bestellung 9000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.6 EUR
6000+	0.57 EUR
9000+	0.53 EUR

Mindestbestellmenge: 3000

SQ3419EV-T1_GE3

Trans MOSFET P-CH 40V 6.9A Automotive AEC-Q101 6-Pin TSOP T/R

auf Bestellung 2890 Stücke:

Lieferzeit 14-21 Tag (e)

227+	0.69 EUR

Mindestbestellmenge: 227

SQ3419EV-T1_GE3

Produkt ist nicht verfügbar

SQ3419EV-T1_GE3

auf Bestellung 10001 Stücke:

Lieferzeit 14-21 Tag (e)

SQ3419EV-T1_GE3

Trans MOSFET P-CH 40V 6.9A Automotive AEC-Q101 6-Pin TSOP T/R

auf Bestellung 358 Stücke:

Lieferzeit 14-21 Tag (e)

266+	0.59 EUR
283+	0.53 EUR
290+	0.5 EUR
335+	0.42 EUR

Mindestbestellmenge: 266

SQ3419EV-T1_GE3

MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified

auf Bestellung 72881 Stücke:

Lieferzeit 14-28 Tag (e)

35+	1.5 EUR
41+	1.27 EUR
100+	0.96 EUR
500+	0.8 EUR
1000+	0.68 EUR
3000+	0.61 EUR
6000+	0.57 EUR

Mindestbestellmenge: 35

SQ3419EV-T1_GE3

Trans MOSFET P-CH 40V 6.9A Automotive AEC-Q101 6-Pin TSOP T/R

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

3000+	0.64 EUR

Mindestbestellmenge: 3000

SQ3419EV-T1_GE3

auf Bestellung 14855 Stücke:

Lieferzeit 21-28 Tag (e)

17+	1.59 EUR
19+	1.37 EUR
100+	0.95 EUR
500+	0.79 EUR
1000+	0.68 EUR

Mindestbestellmenge: 17

SQ3419EV-T1_GE3

Trans MOSFET P-CH 40V 6.9A Automotive AEC-Q101 6-Pin TSOP T/R

auf Bestellung 358 Stücke:

Lieferzeit 14-21 Tag (e)

290+	0.54 EUR
335+	0.45 EUR

Mindestbestellmenge: 290

SQ3425EV-T1_BE3

Description: MOSFET P-CH 20V 7.4A 6-TSOP

auf Bestellung 60 Stücke:

Lieferzeit 21-28 Tag (e)

15+	1.74 EUR
17+	1.53 EUR

Mindestbestellmenge: 15

SQ3425EV-T1_BE3

MOSFET P-CHANNEL 20V (D-S)

auf Bestellung 5210 Stücke:

Lieferzeit 14-28 Tag (e)

33+	1.6 EUR
38+	1.38 EUR
100+	0.96 EUR
500+	0.8 EUR
1000+	0.68 EUR
3000+	0.61 EUR
6000+	0.57 EUR

Mindestbestellmenge: 33

SQ3425EV-T1_BE3

Description: MOSFET P-CH 20V 7.4A 6-TSOP

Produkt ist nicht verfügbar

SQ3425EV-T1_GE3

Description: MOSFET P-CHANNEL 20V 7.4A 6TSOP

auf Bestellung 2999 Stücke:

Lieferzeit 21-28 Tag (e)

15+	1.85 EUR
17+	1.61 EUR
100+	1.24 EUR
500+	0.98 EUR
1000+	0.78 EUR

Mindestbestellmenge: 15

SQ3425EV-T1_GE3

Description: MOSFET P-CHANNEL 20V 7.4A 6TSOP

Produkt ist nicht verfügbar

SQ3425EV-T1_GE3

MOSFET P Ch -20Vds 12Vgs AEC-Q101 Qualified

auf Bestellung 2509 Stücke:

Lieferzeit 14-28 Tag (e)

28+	1.92 EUR
32+	1.68 EUR
100+	1.29 EUR
500+	1.02 EUR

Mindestbestellmenge: 28

SQ3426AEEV-T1_BE3

MOSFET N-CHANNEL 60V (D-S)

auf Bestellung 41425 Stücke:

Lieferzeit 14-28 Tag (e)

33+	1.62 EUR
37+	1.41 EUR
100+	0.98 EUR
500+	0.82 EUR
1000+	0.7 EUR
3000+	0.62 EUR
6000+	0.58 EUR

Mindestbestellmenge: 33

SQ3426AEEV-T1_GE3

Description: MOSFET N-CH 60V 7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 30 V
Qualification: AEC-Q101

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.62 EUR
6000+	0.58 EUR

Mindestbestellmenge: 3000

SQ3426AEEV-T1_GE3

Trans MOSFET N-CH 60V 7A Automotive 6-Pin TSOP

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

SQ3426AEEV-T1_GE3

Description: MOSFET N-CH 60V 7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 9982 Stücke:

Lieferzeit 21-28 Tag (e)

17+	1.61 EUR
19+	1.4 EUR
100+	0.97 EUR
500+	0.81 EUR
1000+	0.69 EUR

Mindestbestellmenge: 17

SQ3426AEEV-T1_GE3

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 29A
Power dissipation: 5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

SQ3426AEEV-T1_GE3

MOSFET 60V Vds -/+20V Vgs AEC-Q101 Qualified

auf Bestellung 30254 Stücke:

Lieferzeit 14-28 Tag (e)

41+	1.28 EUR
45+	1.16 EUR
100+	0.88 EUR
500+	0.75 EUR
1000+	0.65 EUR
3000+	0.6 EUR
6000+	0.58 EUR

Mindestbestellmenge: 41

SQ3426AEEV-T1_GE3

Produkt ist nicht verfügbar

SQ3426CEV-T1_GE3

MOSFET Automotive N-Channel 60V 175C MOSFET 42mO 10V, 63mO 4.5V

auf Bestellung 18513 Stücke:

Lieferzeit 14-28 Tag (e)

41+	1.28 EUR
48+	1.1 EUR
100+	0.82 EUR
500+	0.65 EUR
1000+	0.52 EUR
3000+	0.44 EUR
9000+	0.4 EUR

Mindestbestellmenge: 41

SQ3426CEV-T1_GE3

Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 2315 Stücke:

Lieferzeit 21-28 Tag (e)

21+	1.27 EUR
24+	1.09 EUR
100+	0.76 EUR
500+	0.59 EUR
1000+	0.48 EUR

Mindestbestellmenge: 21

SQ3426CEV-T1_GE3

Description: VISHAY - SQ3426CEV-T1_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 7 A, 0.034 ohm, TSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 5W
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.034ohm
SVHC: No SVHC (10-Jun-2022)

auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)

SQ3426CEV-T1_GE3

Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101

Produkt ist nicht verfügbar

SQ3426EEV-T1-GE3

Description: MOSFET N-CH 60V 7A 6TSOP

Produkt ist nicht verfügbar

SQ3426EEV-T1-GE3

Description: MOSFET N-CH 60V 7A 6TSOP

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

SQ3426EEV-T1-GE3

Description: MOSFET N-CH 60V 7A 6TSOP

Produkt ist nicht verfügbar

SQ3426EV-T1"GE3

Description: VISHAY - SQ3426EV-T1"GE3 - N-CHANNEL 60-V (D-S) 175C MOSFET 26AK9939

Produkt ist nicht verfügbar

SQ3426EV-T1_BE3

MOSFET N-CHANNEL 60V (D-S)

auf Bestellung 224712 Stücke:

Lieferzeit 14-28 Tag (e)

30+	1.79 EUR
34+	1.55 EUR
100+	1.08 EUR
500+	0.9 EUR
1000+	0.77 EUR
3000+	0.67 EUR
6000+	0.62 EUR

Mindestbestellmenge: 30

SQ3426EV-T1_BE3

Description: MOSFET N-CHANNEL 60V 7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 30 V

auf Bestellung 1713 Stücke:

Lieferzeit 21-28 Tag (e)

14+	1.87 EUR
16+	1.66 EUR
100+	1.27 EUR
500+	1 EUR
1000+	0.8 EUR

Mindestbestellmenge: 14

SQ3426EV-T1_BE3

Description: MOSFET N-CHANNEL 60V 7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 30 V

Produkt ist nicht verfügbar

SQ3426EV-T1_GE3

Description: MOSFET N-CHANNEL 60V 7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 30 V

auf Bestellung 48000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.75 EUR
6000+	0.69 EUR
15000+	0.67 EUR
30000+	0.64 EUR

Mindestbestellmenge: 3000

SQ3426EV-T1_GE3

Trans MOSFET N-CH 60V 7A Automotive 6-Pin TSOP T/R

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

SQ3426EV-T1_GE3

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 29A
Power dissipation: 5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced

auf Bestellung 2253 Stücke:

Lieferzeit 14-21 Tag (e)

68+	1.06 EUR
100+	0.72 EUR
113+	0.64 EUR
130+	0.55 EUR
138+	0.52 EUR

Mindestbestellmenge: 68

SQ3426EV-T1_GE3

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 29A
Power dissipation: 5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke

auf Bestellung 2253 Stücke:

Lieferzeit 7-14 Tag (e)

68+	1.06 EUR
100+	0.72 EUR
113+	0.64 EUR
130+	0.55 EUR
138+	0.52 EUR

Mindestbestellmenge: 68

SQ3426EV-T1_GE3

MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified

auf Bestellung 59981 Stücke:

Lieferzeit 14-28 Tag (e)

30+	1.79 EUR
34+	1.55 EUR
100+	1.08 EUR
500+	0.9 EUR
1000+	0.77 EUR
3000+	0.68 EUR
6000+	0.64 EUR

Mindestbestellmenge: 30

SQ3426EV-T1_GE3

Description: MOSFET N-CHANNEL 60V 7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 30 V

auf Bestellung 53981 Stücke:

Lieferzeit 21-28 Tag (e)

14+	1.92 EUR
16+	1.7 EUR
100+	1.3 EUR
500+	1.03 EUR
1000+	0.82 EUR

Mindestbestellmenge: 14

SQ3426EV-T1_GE3

Description: VISHAY - SQ3426EV-T1_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 7 A, 0.032 ohm, TSOP, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 5W
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 5W
Bauform - Transistor: TSOP
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET
productTraceability: No
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.032ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.032ohm
SVHC: No SVHC (10-Jun-2022)

auf Bestellung 53390 Stücke:

Lieferzeit 14-21 Tag (e)

SQ3427AEEV-T1_BE3

MOSFET P-CHANNEL 60V (D-S)

auf Bestellung 149455 Stücke:

Lieferzeit 14-28 Tag (e)

36+	1.47 EUR
40+	1.32 EUR
100+	1 EUR
500+	0.89 EUR
1000+	0.77 EUR
3000+	0.69 EUR
6000+	0.65 EUR

Mindestbestellmenge: 36

SQ3427AEEV-T1_BE3

Description: MOSFET P-CH 60V 5.3A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Qualification: AEC-Q101

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.68 EUR
6000+	0.65 EUR

Mindestbestellmenge: 3000

SQ3427AEEV-T1_BE3

Description: MOSFET P-CH 60V 5.3A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Qualification: AEC-Q101

auf Bestellung 8043 Stücke:

Lieferzeit 21-28 Tag (e)

15+	1.79 EUR
17+	1.56 EUR
100+	1.08 EUR
500+	0.9 EUR
1000+	0.77 EUR

Mindestbestellmenge: 15

SQ3427AEEV-T1_GE3

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A
Kind of package: reel; tape
Pulsed drain current: -21A
Power dissipation: 1.6W
Gate charge: 22nC
Polarisation: unipolar
Technology: TrenchFET®
Features of semiconductor devices: ESD protected gate
Drain current: -5.3A
Kind of channel: enhanced
Drain-source voltage: -60V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: TSOP6
On-state resistance: 178mΩ
Mounting: SMD

Produkt ist nicht verfügbar

SQ3427AEEV-T1_GE3

Description: VISHAY - SQ3427AEEV-T1_GE3 - Leistungs-MOSFET, p-Kanal, 60 V, 5.3 A, 0.079 ohm, TSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 5.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 5W
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.079ohm
SVHC: No SVHC (10-Jun-2022)

auf Bestellung 19490 Stücke:

Lieferzeit 14-21 Tag (e)

SQ3427AEEV-T1_GE3

Description: MOSFET P-CH 60V 5.3A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 27995 Stücke:

Lieferzeit 21-28 Tag (e)

15+	1.79 EUR
17+	1.56 EUR
100+	1.08 EUR
500+	0.9 EUR
1000+	0.77 EUR

Mindestbestellmenge: 15

SQ3427AEEV-T1_GE3

Produkt ist nicht verfügbar

SQ3427AEEV-T1_GE3

auf Bestellung 19490 Stücke:

Lieferzeit 14-21 Tag (e)

SQ3427AEEV-T1_GE3

Description: MOSFET P-CH 60V 5.3A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 27000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.68 EUR
6000+	0.65 EUR
9000+	0.6 EUR

Mindestbestellmenge: 3000

SQ3427AEEV-T1_GE3

MOSFET -60V Vds +/-20V Vgs AEC-Q101 Qualified

auf Bestellung 620714 Stücke:

Lieferzeit 14-28 Tag (e)

29+	1.81 EUR
34+	1.57 EUR
100+	1.09 EUR
500+	0.91 EUR
1000+	0.77 EUR
3000+	0.69 EUR
6000+	0.65 EUR

Mindestbestellmenge: 29

SQ3427AEEV-T1_GE3

Trans MOSFET P-CH 60V 5.3A Automotive 6-Pin TSOP T/R

auf Bestellung 6170 Stücke:

Lieferzeit 14-21 Tag (e)

SQ3427EEV-T1-GE3

Description: MOSFET P-CH 60V 5.5A 6TSOP

Produkt ist nicht verfügbar

SQ3427EEV-T1-GE3

Description: MOSFET P-CH 60V 5.5A 6TSOP

Produkt ist nicht verfügbar

SQ3427EEV-T1-GE3

Description: MOSFET P-CH 60V 5.5A 6TSOP

Produkt ist nicht verfügbar

SQ3427EV-T1_BE3

Description: MOSFET P-CH 60V 5.3A 6TSOP

Produkt ist nicht verfügbar

SQ3427EV-T1_BE3

MOSFET P-CHANNEL 60V (D-S)

auf Bestellung 113735 Stücke:

Lieferzeit 14-28 Tag (e)

33+	1.6 EUR
38+	1.38 EUR
100+	0.96 EUR
500+	0.8 EUR
1000+	0.68 EUR
3000+	0.58 EUR
6000+	0.56 EUR

Mindestbestellmenge: 33

SQ3427EV-T1_BE3

Description: MOSFET P-CH 60V 5.3A 6TSOP

Produkt ist nicht verfügbar

SQ3427EV-T1_GE3

MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified

auf Bestellung 452505 Stücke:

Lieferzeit 14-28 Tag (e)

33+	1.6 EUR
38+	1.38 EUR
100+	0.96 EUR
500+	0.8 EUR
1000+	0.68 EUR
3000+	0.61 EUR
6000+	0.57 EUR

Mindestbestellmenge: 33

SQ3427EV-T1_GE3

Description: VISHAY - SQ3427EV-T1_GE3 - Leistungs-MOSFET, p-Kanal, 60 V, 5.3 A, 0.079 ohm, TSOP, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 5.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 5W
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.079ohm
SVHC: No SVHC (10-Jun-2022)

auf Bestellung 12583 Stücke:

Lieferzeit 14-21 Tag (e)

SQ3427EV-T1_GE3

auf Bestellung 17440 Stücke:

Lieferzeit 21-28 Tag (e)

17+	1.59 EUR
19+	1.37 EUR
100+	0.95 EUR
500+	0.79 EUR
1000+	0.68 EUR

Mindestbestellmenge: 17

SQ3427EV-T1_GE3

Trans MOSFET P-CH 60V 5.3A Automotive 6-Pin TSOP T/R

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

SQ3427EV-T1_GE3

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A
Kind of package: reel; tape
Pulsed drain current: -21A
Power dissipation: 5W
Gate charge: 22nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -5.3A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: TSOP6
On-state resistance: 178mΩ
Mounting: SMD

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

68+	1.06 EUR
103+	0.7 EUR
114+	0.63 EUR
157+	0.46 EUR
166+	0.43 EUR

Mindestbestellmenge: 68

SQ3427EV-T1_GE3

auf Bestellung 12583 Stücke:

Lieferzeit 14-21 Tag (e)

SQ3427EV-T1_GE3

auf Bestellung 12000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.6 EUR
6000+	0.57 EUR
9000+	0.53 EUR

Mindestbestellmenge: 3000

SQ3427EV-T1_GE3

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A
Kind of package: reel; tape
Pulsed drain current: -21A
Power dissipation: 5W
Gate charge: 22nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -5.3A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: TSOP6
On-state resistance: 178mΩ
Mounting: SMD
Anzahl je Verpackung: 1 Stücke

auf Bestellung 3000 Stücke:

Lieferzeit 7-14 Tag (e)

68+	1.06 EUR
103+	0.7 EUR
114+	0.63 EUR
157+	0.46 EUR
166+	0.43 EUR

Mindestbestellmenge: 68

SQ3442EV-T1-GE3

Description: MOSFET N-CH 20V 4.3A 6TSOP

auf Bestellung 5 Stücke:

Lieferzeit 21-28 Tag (e)

SQ3442EV-T1-GE3

Description: MOSFET N-CH 20V 4.3A 6TSOP

Produkt ist nicht verfügbar

SQ3442EV-T1-GE3

Description: MOSFET N-CH 20V 4.3A 6TSOP

Produkt ist nicht verfügbar

SQ3456BEV-T1-GE3

Description: MOSFET N-CH 30V 7.8A 6TSOP

auf Bestellung 10 Stücke:

Lieferzeit 21-28 Tag (e)

SQ3456BEV-T1-GE3

Description: MOSFET N-CH 30V 7.8A 6TSOP

auf Bestellung 10 Stücke:

Lieferzeit 21-28 Tag (e)

SQ3456BEV-T1-GE3

Description: MOSFET N-CH 30V 7.8A 6TSOP

Produkt ist nicht verfügbar

SQ3456BEV-T1_GE3

Description: MOSFET N-CH 30V 7.8A 6TSOP

auf Bestellung 7 Stücke:

Lieferzeit 21-28 Tag (e)

SQ3456BEV-T1_GE3

Description: MOSFET N-CH 30V 7.8A 6TSOP

Produkt ist nicht verfügbar

SQ3456BEV-T1_GE3

MOSFET 30V 7.8A 4W AEC-Q101 Qualified

auf Bestellung 2199 Stücke:

Lieferzeit 14-28 Tag (e)

SQ3456CEV

Trans MOSFET N-CH 30V 7.8A 6-Pin TSOP T/R Automotive AEC-Q101

auf Bestellung 50 Stücke:

Lieferzeit 14-21 Tag (e)

SQ3456CEV

Trans MOSFET N-CH 30V 7.8A 6-Pin TSOP T/R Automotive AEC-Q101

auf Bestellung 50 Stücke:

Lieferzeit 14-21 Tag (e)

SQ3456CEV-T1_GE3

Description: AUTOMOTIVE N-CHANNEL 30 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Power Dissipation (Max): 4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V

auf Bestellung 3050 Stücke:

Lieferzeit 21-28 Tag (e)

19+	1.38 EUR
22+	1.19 EUR
100+	0.89 EUR
500+	0.7 EUR
1000+	0.54 EUR

Mindestbestellmenge: 19

SQ3456CEV-T1_GE3

MOSFET Automotive N-Channel 30V 175C MOSFET 35mO 10V, 52mO 4.5V

auf Bestellung 5759 Stücke:

Lieferzeit 14-28 Tag (e)

43+	1.23 EUR
49+	1.06 EUR
100+	0.79 EUR
500+	0.62 EUR
1000+	0.5 EUR
3000+	0.42 EUR
9000+	0.38 EUR

Mindestbestellmenge: 43

SQ3456CEV-T1_GE3

Description: AUTOMOTIVE N-CHANNEL 30 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Power Dissipation (Max): 4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.49 EUR

Mindestbestellmenge: 3000

SQ3456EV-T1-GE3

Description: MOSFET N-CH D-S 30V 6TSOP

Produkt ist nicht verfügbar

SQ3457EV-T1_BE3

SQ3457EV-T1-BE3 SMD P channel transistors

Produkt ist nicht verfügbar

SQ3457EV-T1_BE3

Description: MOSFET P-CHANNEL 30V 6.8A 6TSOP

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.76 EUR

Mindestbestellmenge: 3000

SQ3457EV-T1_BE3

MOSFET P-CHANNEL 30V (D-S)

auf Bestellung 5823 Stücke:

Lieferzeit 14-28 Tag (e)

40+	1.31 EUR
45+	1.16 EUR
100+	0.88 EUR
500+	0.78 EUR
1000+	0.68 EUR
3000+	0.59 EUR
6000+	0.57 EUR

Mindestbestellmenge: 40

SQ3457EV-T1_BE3

Description: MOSFET P-CHANNEL 30V 6.8A 6TSOP

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

14+	1.9 EUR
16+	1.67 EUR
100+	1.28 EUR
500+	1.01 EUR
1000+	0.81 EUR

Mindestbestellmenge: 14

SQ3457EV-T1_GE3

Trans MOSFET P-CH 30V 6.8A Automotive 6-Pin TSOP T/R

auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)

SQ3457EV-T1_GE3

Description: MOSFET P-CHANNEL 30V 6.8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 15 V
Qualification: AEC-Q101

auf Bestellung 14952 Stücke:

Lieferzeit 21-28 Tag (e)

17+	1.59 EUR
19+	1.37 EUR
100+	0.95 EUR
500+	0.79 EUR
1000+	0.68 EUR

Mindestbestellmenge: 17

SQ3457EV-T1_GE3

Description: VISHAY - SQ3457EV-T1_GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 6.8 A, 0.035 ohm, TSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 6.8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 5W
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.035ohm

auf Bestellung 17803 Stücke:

Lieferzeit 14-21 Tag (e)

SQ3457EV-T1_GE3

MOSFET P-Channel 30V AEC-Q101 Qualified

auf Bestellung 203399 Stücke:

Lieferzeit 14-28 Tag (e)

41+	1.28 EUR
46+	1.13 EUR
100+	0.83 EUR
500+	0.72 EUR
1000+	0.63 EUR
3000+	0.58 EUR
6000+	0.56 EUR

Mindestbestellmenge: 41

SQ3457EV-T1_GE3

Description: MOSFET P-CHANNEL 30V 6.8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 15 V
Qualification: AEC-Q101

auf Bestellung 12000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.6 EUR
6000+	0.57 EUR
9000+	0.53 EUR

Mindestbestellmenge: 3000

SQ3457EV-T1_GE3

auf Bestellung 17803 Stücke:

Lieferzeit 14-21 Tag (e)

SQ3457EV-T1_GE3

SQ3457EV-T1-GE3 SMD P channel transistors

Produkt ist nicht verfügbar

SQ3460EV-T1-GE3

Description: MOSFET N-CH 20V 8A 6TSOP

auf Bestellung 541 Stücke:

Lieferzeit 21-28 Tag (e)

SQ3460EV-T1-GE3

Description: MOSFET N-CH 20V 8A 6TSOP

auf Bestellung 541 Stücke:

Lieferzeit 21-28 Tag (e)

SQ3460EV-T1-GE3

Description: MOSFET N-CH 20V 8A 6TSOP

Produkt ist nicht verfügbar

SQ3460EV-T1_GE3

MOSFET 20V 8A 3.6W AEC-Q101 Qualified

auf Bestellung 394 Stücke:

Lieferzeit 14-28 Tag (e)

22+	2.37 EUR
26+	2.02 EUR
100+	1.57 EUR
500+	1.32 EUR
1000+	1.06 EUR
3000+	1 EUR
6000+	0.95 EUR

Mindestbestellmenge: 22

SQ3460EV-T1_GE3

Description: VISHAY - SQ3460EV-T1_GE3 - Leistungs-MOSFET, n-Kanal, 20 V, 8 A, 0.025 ohm, TSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 600mV
euEccn: NLR
Verlustleistung: 3.6W
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pins
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.025ohm

auf Bestellung 1020 Stücke:

Lieferzeit 14-21 Tag (e)

SQ3460EV-T1_GE3

Trans MOSFET N-CH 20V 8A Automotive 6-Pin TSOP T/R

Produkt ist nicht verfügbar

SQ3460EV-T1_GE3

auf Bestellung 1020 Stücke:

Lieferzeit 14-21 Tag (e)

SQ3461EV-T1_BE3

Description: P-CHANNEL 12-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V

Produkt ist nicht verfügbar

SQ3461EV-T1_BE3

Description: P-CHANNEL 12-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V

Produkt ist nicht verfügbar

SQ3461EV-T1_BE3

MOSFET P-CHANNEL 12-V (D-S) 175C MOSFET

auf Bestellung 47953 Stücke:

Lieferzeit 14-28 Tag (e)

28+	1.86 EUR
32+	1.64 EUR
100+	1.12 EUR
500+	0.93 EUR
1000+	0.8 EUR
3000+	0.7 EUR

Mindestbestellmenge: 28

SQ3461EV-T1_GE3

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6.6A; 1.67W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6.6A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

SQ3461EV-T1_GE3

MOSFET P Ch -12Vds 8Vgs AEC-Q101 Qualified

auf Bestellung 16631 Stücke:

Lieferzeit 14-28 Tag (e)

28+	1.86 EUR
33+	1.61 EUR
100+	1.12 EUR
500+	0.93 EUR
1000+	0.8 EUR
3000+	0.71 EUR
6000+	0.67 EUR

Mindestbestellmenge: 28

SQ3461EV-T1_GE3

Trans MOSFET P-CH 12V 8A Automotive 6-Pin TSOP T/R

Produkt ist nicht verfügbar

SQ3461EV-T1_GE3

Description: MOSFET P-CHANNEL 12V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V

Produkt ist nicht verfügbar

SQ3461EV-T1_GE3

Trans MOSFET P-CH 12V 8A Automotive 6-Pin TSOP T/R

Produkt ist nicht verfügbar

SQ3461EV-T1_GE3

Produkt ist nicht verfügbar

SQ3461EV-T1_GE3

Description: MOSFET P-CHANNEL 12V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V

Produkt ist nicht verfügbar

SQ3461EV-T1_GE3

Trans MOSFET P-CH 12V 8A Automotive 6-Pin TSOP T/R

Produkt ist nicht verfügbar

SQ3469EV-T1-GE3

MOSFET RECOMMENDED ALT SQ3469EV-T1_GE3

Produkt ist nicht verfügbar

SQ3469EV-T1-GE3

Description: MOSFET P-CH 20V 8A TSOP-6

Produkt ist nicht verfügbar

SQ3469EV-T1_BE3

Description: P-CHANNEL 20-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.7A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 25µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V

auf Bestellung 8655 Stücke:

Lieferzeit 21-28 Tag (e)

19+	1.43 EUR
22+	1.23 EUR
100+	0.85 EUR
500+	0.71 EUR
1000+	0.61 EUR

Mindestbestellmenge: 19

SQ3469EV-T1_BE3

Description: P-CHANNEL 20-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.7A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 25µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.54 EUR
6000+	0.51 EUR

Mindestbestellmenge: 3000

SQ3469EV-T1_GE3

Description: MOSFET P-CH 20V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.7A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 25µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V

auf Bestellung 2013 Stücke:

Lieferzeit 21-28 Tag (e)

17+	1.56 EUR
20+	1.35 EUR
100+	0.94 EUR
500+	0.78 EUR
1000+	0.67 EUR

Mindestbestellmenge: 17

SQ3469EV-T1_GE3

MOSFET 20V 8A 5W AEC-Q101 Qualified

auf Bestellung 2960 Stücke:

Lieferzeit 14-28 Tag (e)

33+	1.6 EUR
38+	1.4 EUR
100+	0.96 EUR
500+	0.8 EUR
1000+	0.68 EUR
3000+	0.6 EUR
6000+	0.56 EUR

Mindestbestellmenge: 33

SQ3469EV-T1_GE3

Description: MOSFET P-CH 20V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.7A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 25µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V

Produkt ist nicht verfügbar

SQ3481EV-T1-GE3

MOSFET P-Channel 30V Automotive MOSFET

auf Bestellung 1350 Stücke:

Lieferzeit 14-28 Tag (e)

SQ3481EV-T1_BE3

SQ3481EV-T1-BE3 SMD P channel transistors

Produkt ist nicht verfügbar

SQ3481EV-T1_BE3

Description: MOSFET P-CHANNEL 30V 7.5A 6TSOP

Produkt ist nicht verfügbar

SQ3481EV-T1_BE3

MOSFET P-CHANNEL 30V (D-S)

auf Bestellung 50541 Stücke:

Lieferzeit 14-28 Tag (e)

44+	1.19 EUR
49+	1.07 EUR
100+	0.85 EUR
500+	0.77 EUR
1000+	0.68 EUR
3000+	0.59 EUR
6000+	0.56 EUR

Mindestbestellmenge: 44

SQ3481EV-T1_BE3

Description: MOSFET P-CHANNEL 30V 7.5A 6TSOP

Produkt ist nicht verfügbar

SQ3481EV-T1_GE3

Description: MOSFET P-CHANNEL 30V 7.5A 6TSOP

Produkt ist nicht verfügbar

SQ3481EV-T1_GE3

MOSFET P-Channel 30V AEC-Q101 Qualified

auf Bestellung 43768 Stücke:

Lieferzeit 14-28 Tag (e)

33+	1.6 EUR
38+	1.38 EUR
100+	0.96 EUR
500+	0.8 EUR
1000+	0.68 EUR
3000+	0.59 EUR
6000+	0.57 EUR

Mindestbestellmenge: 33

SQ3481EV-T1_GE3

Description: MOSFET P-CHANNEL 30V 7.5A 6TSOP

Produkt ist nicht verfügbar

SQ3493EV-T1_GE3

Description: VISHAY - SQ3493EV-T1_GE3 - Leistungs-MOSFET, p-Kanal, 20 V, 8 A, 0.016 ohm, TSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1V
euEccn: NLR
Verlustleistung: 5W
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pins
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.016ohm

auf Bestellung 11064 Stücke:

Lieferzeit 14-21 Tag (e)

SQ3493EV-T1_GE3

Description: MOSFET P-CH 20V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.62 EUR

Mindestbestellmenge: 3000

SQ3493EV-T1_GE3

SQ3493EV-T1-GE3 SMD P channel transistors

Produkt ist nicht verfügbar

SQ3493EV-T1_GE3

auf Bestellung 11064 Stücke:

Lieferzeit 14-21 Tag (e)

SQ3493EV-T1_GE3

MOSFET P-CHANNEL 20-V (D-S) 175C MOSFET

auf Bestellung 2168 Stücke:

Lieferzeit 14-28 Tag (e)

33+	1.6 EUR
37+	1.42 EUR
100+	0.96 EUR
500+	0.81 EUR
1000+	0.69 EUR
3000+	0.62 EUR
6000+	0.58 EUR

Mindestbestellmenge: 33

SQ3493EV-T1_GE3

Description: MOSFET P-CH 20V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V

auf Bestellung 5994 Stücke:

Lieferzeit 21-28 Tag (e)

16+	1.66 EUR
19+	1.42 EUR
100+	0.99 EUR
500+	0.82 EUR
1000+	0.7 EUR

Mindestbestellmenge: 16

SQ3495EV-T1_GE3

Description: MOSFET P-CH 30V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 20 V
Qualification: AEC-Q101

auf Bestellung 15600 Stücke:

Lieferzeit 21-28 Tag (e)

17+	1.61 EUR
19+	1.39 EUR
100+	0.96 EUR
500+	0.8 EUR
1000+	0.68 EUR

Mindestbestellmenge: 17

SQ3495EV-T1_GE3

Description: VISHAY - SQ3495EV-T1_GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 8 A, 0.017 ohm, TSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1V
euEccn: NLR
Verlustleistung: 5W
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.017ohm

auf Bestellung 2261 Stücke:

Lieferzeit 14-21 Tag (e)

SQ3495EV-T1_GE3

MOSFET P-CHANNEL 30-V (D-S) 175C MOSFET

auf Bestellung 14384 Stücke:

Lieferzeit 14-28 Tag (e)

41+	1.28 EUR
46+	1.14 EUR
100+	0.84 EUR
500+	0.73 EUR
1000+	0.64 EUR
3000+	0.6 EUR
6000+	0.58 EUR

Mindestbestellmenge: 41

SQ3495EV-T1_GE3

Description: MOSFET P-CH 30V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 20 V
Qualification: AEC-Q101

auf Bestellung 9000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.61 EUR
6000+	0.58 EUR
9000+	0.53 EUR

Mindestbestellmenge: 3000

SQ3495EV-T1_GE3

auf Bestellung 2261 Stücke:

Lieferzeit 14-21 Tag (e)

SQ3585EV-T1_GE3

Description: MOSFET N/P-CH 20V 3.57A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.67W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.57A (Tc), 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, 3.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 12072 Stücke:

Lieferzeit 21-28 Tag (e)

4+	8.4 EUR
10+	7.54 EUR
25+	7.13 EUR
100+	6.18 EUR
250+	5.86 EUR
500+	5.26 EUR
1000+	4.44 EUR

Mindestbestellmenge: 4

SQ3585EV-T1_GE3

Description: MOSFET N/P-CH 20V 3.57A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.67W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.57A (Tc), 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, 3.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 9000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	4.21 EUR

Mindestbestellmenge: 3000

SQ3585EV-T1_GE3

Trans MOSFET N/P-CH 20V 3.57A/2.5A Automotive 6-Pin TSOP T/R

Produkt ist nicht verfügbar

SQ3585EV-T1_GE3

MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified

auf Bestellung 13354 Stücke:

Lieferzeit 14-28 Tag (e)

7+	8.48 EUR
10+	7.1 EUR
25+	6.73 EUR
100+	5.75 EUR
250+	5.43 EUR
500+	5.12 EUR
1000+	4.37 EUR

Mindestbestellmenge: 7

SQ3985EV-T1_BE3

MOSFET P-CHANNEL 20V (D-S)

auf Bestellung 12720 Stücke:

Lieferzeit 14-28 Tag (e)

33+	1.6 EUR
38+	1.4 EUR
100+	0.96 EUR
500+	0.8 EUR
1000+	0.68 EUR
3000+	0.62 EUR
6000+	0.57 EUR

Mindestbestellmenge: 33

SQ3985EV-T1_GE3

MOSFET P Ch -20Vds 8Vgs AEC-Q101 Qualified

auf Bestellung 131909 Stücke:

Lieferzeit 14-28 Tag (e)

33+	1.6 EUR
38+	1.38 EUR
100+	0.96 EUR
500+	0.8 EUR
1000+	0.68 EUR
3000+	0.6 EUR
6000+	0.57 EUR

Mindestbestellmenge: 33

SQ3985EV-T1_GE3

auf Bestellung 2965 Stücke:

Lieferzeit 21-28 Tag (e)

SQ3985EV-T1_GE3

Trans MOSFET P-CH 20V 3.9A Automotive 6-Pin TSOP

Produkt ist nicht verfügbar

SQ3987EV-T1_GE3

DUAL P-CHANNEL 30-V (D-S) 175C MOSFET

Produkt ist nicht verfügbar

SQ3987EV-T1_GE3

DUAL P-CHANNEL 30-V (D-S) 175C MOSFET

Produkt ist nicht verfügbar

SQ3987EV-T1_GE3

Description: VISHAY - SQ3987EV-T1_GE3 - Dual-MOSFET, p-Kanal, 30 V, 30 V, 3 A, 3 A, 0.085 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 3A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.085ohm
Verlustleistung, p-Kanal: 1.67W
euEccn: NLR
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.085ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Verlustleistung, n-Kanal: 1.67W
SVHC: No SVHC (10-Jun-2022)

auf Bestellung 7888 Stücke:

Lieferzeit 14-21 Tag (e)

SQ3987EV-T1_GE3

Description: MOSFET 2P-CH 30V 3A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.67W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V
Rds On (Max) @ Id, Vgs: 133mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 7092 Stücke:

Lieferzeit 21-28 Tag (e)

19+	1.43 EUR
21+	1.25 EUR
100+	0.86 EUR
500+	0.72 EUR
1000+	0.61 EUR

Mindestbestellmenge: 19

SQ3987EV-T1_GE3

Description: VISHAY - SQ3987EV-T1_GE3 - Dual-MOSFET, p-Kanal, 30 V, 30 V, 3 A, 3 A, 0.085 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 3A
Dauer-Drainstrom Id, p-Kanal: 3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 3A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.085ohm
Verlustleistung, p-Kanal: 1.67W
euEccn: NLR
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.085ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Verlustleistung, n-Kanal: 1.67W
Betriebstemperatur, max.: 175°C

auf Bestellung 7888 Stücke:

Lieferzeit 14-21 Tag (e)

SQ3987EV-T1_GE3

MOSFET Dual P-Ch -30V AEC-Q101 Qualified

auf Bestellung 66742 Stücke:

Lieferzeit 544-558 Tag (e)

31+	1.69 EUR
35+	1.5 EUR
100+	1.15 EUR
500+	0.91 EUR

Mindestbestellmenge: 31

SQ3987EV-T1_GE3
Produktcode: 174743

Transistoren > Transistoren P-Kanal-Feld

Produkt ist nicht verfügbar

SQ3987EV-T1_GE3

Description: MOSFET 2P-CH 30V 3A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.67W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V
Rds On (Max) @ Id, Vgs: 133mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.55 EUR

Mindestbestellmenge: 3000

SQ3989EV-T1_BE3

Description: DUAL P-CHANNEL 30-V (D-S) 175C M
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.67W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 400mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active

Produkt ist nicht verfügbar

SQ3989EV-T1_BE3

Description: DUAL P-CHANNEL 30-V (D-S) 175C M
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.67W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 400mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active

Produkt ist nicht verfügbar

SQ3989EV-T1_GE3

Description: MOSFET 2P-CH 30V 2.5A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.67W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 400mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101

auf Bestellung 42000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.46 EUR
6000+	0.44 EUR
9000+	0.41 EUR
30000+	0.4 EUR

Mindestbestellmenge: 3000

SQ3989EV-T1_GE3

MOSFET Dual P-Channel 30V TSOP-6

auf Bestellung 237505 Stücke:

Lieferzeit 14-28 Tag (e)

38+	1.38 EUR
45+	1.18 EUR
100+	0.82 EUR
500+	0.64 EUR
1000+	0.51 EUR
3000+	0.44 EUR
9000+	0.41 EUR

Mindestbestellmenge: 38

SQ3989EV-T1_GE3