SQ3419AEEV-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 40V 6.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 20 V
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 3000+ | 0.44 EUR |
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Technische Details SQ3419AEEV-T1_GE3 Vishay Siliconix
Description: MOSFET P-CHANNEL 40V 6.9A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc), Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 10V, Power Dissipation (Max): 5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 6-TSOP, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote SQ3419AEEV-T1_GE3 nach Preis ab 0.38 EUR bis 1.65 EUR
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SQ3419AEEV-T1_GE3 | Vishay / Siliconix |
MOSFETs -40V Vds TSOP-6 AEC-Q101 Qualified |
auf Bestellung 24023 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3419AEEV-T1_GE3 | Vishay Siliconix |
Description: MOSFET P-CHANNEL 40V 6.9A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc) Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 4243 Stücke: Lieferzeit 10-14 Tag (e) |
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| SQ3419AEEV-T1_GE3 |
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Hersteller: Vishay / Siliconix
MOSFETs -40V Vds TSOP-6 AEC-Q101 Qualified
MOSFETs -40V Vds TSOP-6 AEC-Q101 Qualified
auf Bestellung 24023 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 1.39 EUR |
| 10+ | 1 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.47 EUR |
| 3000+ | 0.42 EUR |
| 6000+ | 0.38 EUR |
| SQ3419AEEV-T1_GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 40V 6.9A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CHANNEL 40V 6.9A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 4243 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 1.65 EUR |
| 17+ | 1.07 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.5 EUR |