SQ3461EV-T1_BE3 Vishay / Siliconix
auf Bestellung 47953 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 1.26 EUR |
| 10+ | 1.11 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.54 EUR |
| 3000+ | 0.47 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQ3461EV-T1_BE3 Vishay / Siliconix
Description: P-CHANNEL 12-V (D-S) 175C MOSFET, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 4.5V, Power Dissipation (Max): 5W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V.
Weitere Produktangebote SQ3461EV-T1_BE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
SQ3461EV-T1_BE3 | Hersteller : Vishay Siliconix |
 Description: P-CHANNEL 12-V (D-S) 175C MOSFETPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 4.5V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V |
Produkt ist nicht verfügbar |
|
|
|
SQ3461EV-T1_BE3 | Hersteller : Vishay Siliconix |
Description: P-CHANNEL 12-V (D-S) 175C MOSFET Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 4.5V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V |
Produkt ist nicht verfügbar |