SQ3419EV-T1_GE3 Vishay Siliconix

Description: MOSFET P-CH 40V 6.9A 6TSOP, Qualification: AEC-Q101, Grade: Automotive, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 5W (Tc), Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc), FET Type: P-Channel, Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 4.5 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 6-TSOP.