SQ3456BEV-T1-GE3 Vishay Siliconix
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details SQ3456BEV-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 7.8A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V, Power Dissipation (Max): 4W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 6-TSOP, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 15 V, Qualification: AEC-Q101.
Weitere Produktangebote SQ3456BEV-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
|
SQ3456BEV-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 30V 7.8A 6TSOP |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
|
 |
SQ3456BEV-T1_GE3 | Hersteller : Vishay Semiconductors |
MOSFET 30V 7.8A 4W AEC-Q101 Qualified |
auf Bestellung 2199 Stücke: Lieferzeit 10-14 Tag (e) |
|
|
|
SQ3456BEV-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 7.8A 6TSOP |
Produkt ist nicht verfügbar |
|
 |
SQ3456BEV-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 7.8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V Power Dissipation (Max): 4W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 15 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|
|
|
SQ3456BEV-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 7.8A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V Power Dissipation (Max): 4W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 15 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |