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SQ3427CEEV-T1_GE3

SQ3427CEEV-T1_GE3 Vishay Siliconix


sq3427ceev.pdf Hersteller: Vishay Siliconix
Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 1959 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
28+0.65 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.28 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SQ3427CEEV-T1_GE3 Vishay Siliconix

Description: P-CHANNEL 60-V (D-S) 175C MOSFET, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V, Power Dissipation (Max): 5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 6-TSOP, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V, Qualification: AEC-Q101.

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SQ3427CEEV-T1_GE3 SQ3427CEEV-T1_GE3 Hersteller : Vishay Semiconductors sq3427ceev.pdf MOSFETs P-CHANNEL 60-V (D-S) 175C MOSFET
auf Bestellung 146 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.06 EUR
10+0.66 EUR
100+0.43 EUR
500+0.32 EUR
1000+0.29 EUR
3000+0.25 EUR
6000+0.23 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SQ3427CEEV-T1_GE3 SQ3427CEEV-T1_GE3 Hersteller : Vishay doc62254.pdf Trans MOSFET P-CH 60V 5.3A 6-Pin TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQ3427CEEV-T1_GE3 SQ3427CEEV-T1_GE3 Hersteller : Vishay Siliconix sq3427ceev.pdf Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH