SQ3585EV-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 3.57A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.67W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.57A (Tc), 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, 3.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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Technische Details SQ3585EV-T1_GE3 Vishay Siliconix
Description: VISHAY - SQ3585EV-T1_GE3 - Dual-MOSFET, n- und p-Kanal, 20 V, 20 V, 3.57 A, 2.5 A, 0.049 ohm, tariffCode: 85412900, euEccn: NLR, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 2.5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: 20V, Dauer-Drainstrom Id, n-Kanal: 3.57A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.265ohm, Verlustleistung, p-Kanal: 1.67W, Drain-Source-Spannung Vds, n-Kanal: 20V, SVHC: No SVHC (04-Feb-2026), Bauform - Transistor: TSOP, Anzahl der Pins: 6Pin(s), Produktpalette: TrenchFET Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.049ohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n- und p-Kanal, Verlustleistung, n-Kanal: 1.67W, Betriebstemperatur, max.: 175°C.
Weitere Produktangebote SQ3585EV-T1_GE3 nach Preis ab 0.58 EUR bis 8.27 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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SQ3585EV-T1_GE3 | VISHAY |
Description: VISHAY - SQ3585EV-T1_GE3 - Dual-MOSFET, n- und p-Kanal, 20 V, 20 V, 3.57 A, 2.5 A, 0.049 ohm tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR isCanonical: N hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ3585EV-T1_GE3 | VISHAY |
Description: VISHAY - SQ3585EV-T1_GE3 - Dual-MOSFET, n- und p-Kanal, 20 V, 20 V, 3.57 A, 2.5 A, 0.049 ohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 20V Dauer-Drainstrom Id, n-Kanal: 3.57A Drain-Source-Durchgangswiderstand, p-Kanal: 0.265ohm Verlustleistung, p-Kanal: 1.67W Drain-Source-Spannung Vds, n-Kanal: 20V SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.049ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n- und p-Kanal Verlustleistung, n-Kanal: 1.67W Betriebstemperatur, max.: 175°C |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ3585EV-T1_GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 20V 3.57A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.67W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.57A (Tc), 2.5A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, 3.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 11289 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3585EV-T1_GE3 | Vishay Semiconductors |
MOSFETs N Ch 20Vds 12Vgs AEC-Q101 Qualified |
auf Bestellung 10059 Stücke: Lieferzeit 10-14 Tag (e) |
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| SQ3585EV-T1_GE3 |
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Hersteller: VISHAY
Description: VISHAY - SQ3585EV-T1_GE3 - Dual-MOSFET, n- und p-Kanal, 20 V, 20 V, 3.57 A, 2.5 A, 0.049 ohm
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
isCanonical: N
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Description: VISHAY - SQ3585EV-T1_GE3 - Dual-MOSFET, n- und p-Kanal, 20 V, 20 V, 3.57 A, 2.5 A, 0.049 ohm
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
isCanonical: N
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 186+ | 1.34 EUR |
| 260+ | 0.89 EUR |
| 315+ | 0.68 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.58 EUR |
| SQ3585EV-T1_GE3 |
|
Hersteller: VISHAY
Description: VISHAY - SQ3585EV-T1_GE3 - Dual-MOSFET, n- und p-Kanal, 20 V, 20 V, 3.57 A, 2.5 A, 0.049 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 2.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 20V
Dauer-Drainstrom Id, n-Kanal: 3.57A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.265ohm
Verlustleistung, p-Kanal: 1.67W
Drain-Source-Spannung Vds, n-Kanal: 20V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.049ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n- und p-Kanal
Verlustleistung, n-Kanal: 1.67W
Betriebstemperatur, max.: 175°C
Description: VISHAY - SQ3585EV-T1_GE3 - Dual-MOSFET, n- und p-Kanal, 20 V, 20 V, 3.57 A, 2.5 A, 0.049 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 2.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 20V
Dauer-Drainstrom Id, n-Kanal: 3.57A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.265ohm
Verlustleistung, p-Kanal: 1.67W
Drain-Source-Spannung Vds, n-Kanal: 20V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.049ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n- und p-Kanal
Verlustleistung, n-Kanal: 1.67W
Betriebstemperatur, max.: 175°C
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 186+ | 1.34 EUR |
| 260+ | 0.89 EUR |
| 315+ | 0.68 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.58 EUR |
| SQ3585EV-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 3.57A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.67W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.57A (Tc), 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, 3.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 20V 3.57A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.67W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.57A (Tc), 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, 3.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11289 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.96 EUR |
| 18+ | 1.23 EUR |
| 50+ | 0.9 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.62 EUR |
| SQ3585EV-T1_GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs N Ch 20Vds 12Vgs AEC-Q101 Qualified
MOSFETs N Ch 20Vds 12Vgs AEC-Q101 Qualified
auf Bestellung 10059 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.27 EUR |
| 10+ | 5.46 EUR |
| 100+ | 4.27 EUR |
| 500+ | 3.8 EUR |
| 1000+ | 3.25 EUR |
| 3000+ | 3.06 EUR |