SQ3585EV-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N/P-CH 20V 3.57A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.67W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.57A (Tc), 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, 3.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 3031 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.42 EUR |
| 10+ | 4.08 EUR |
| 25+ | 3.74 EUR |
| 100+ | 3.37 EUR |
| 250+ | 3.19 EUR |
| 500+ | 3.08 EUR |
| 1000+ | 3.00 EUR |
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Technische Details SQ3585EV-T1_GE3 Vishay Siliconix
Description: MOSFET N/P-CH 20V 3.57A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.67W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.57A (Tc), 2.5A (Tc), Rds On (Max) @ Id, Vgs: 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, 3.5nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 6-TSOP, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote SQ3585EV-T1_GE3 nach Preis ab 2.87 EUR bis 5.58 EUR
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MOSFETs N Ch 20Vds 12Vgs AEC-Q101 Qualified |
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SQ3585EV-T1_GE3 | Hersteller : Vishay |
Trans MOSFET N/P-CH 20V 3.57A/2.5A Automotive 6-Pin TSOP T/R |
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SQ3585EV-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 20V 3.57A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.67W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.57A (Tc), 2.5A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, 3.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
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