SQ3585EV-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 3.57A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.67W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.57A (Tc), 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, 3.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 3000+ | 0.36 EUR |
| 6000+ | 0.35 EUR |
| 9000+ | 0.34 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQ3585EV-T1_GE3 Vishay Siliconix
Description: MOSFET N/P-CH 20V 3.57A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.67W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.57A (Tc), 2.5A (Tc), Rds On (Max) @ Id, Vgs: 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, 3.5nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQ3585EV-T1_GE3 nach Preis ab 0.38 EUR bis 6.95 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SQ3585EV-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 20V 3.57A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.67W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.57A (Tc), 2.5A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, 3.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 11848 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
SQ3585EV-T1_GE3 | Hersteller : Vishay Semiconductors |
MOSFETs N Ch 20Vds 12Vgs AEC-Q101 Qualified |
auf Bestellung 10059 Stücke: Lieferzeit 10-14 Tag (e) |
|