auf Bestellung 7716 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 312+ | 0.46 EUR |
| 350+ | 0.4 EUR |
| 357+ | 0.38 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.3 EUR |
| 3000+ | 0.28 EUR |
| 6000+ | 0.26 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQ3426AEEV-T1_GE3 Vishay
Description: MOSFET N-CH 60V 7A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V, Power Dissipation (Max): 5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 6-TSOP, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote SQ3426AEEV-T1_GE3 nach Preis ab 0.26 EUR bis 1.81 EUR
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SQ3426AEEV-T1_GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 60V 7A 6-Pin TSOP Automotive AEC-Q101 |
auf Bestellung 7716 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ3426AEEV-T1_GE3 | Hersteller : Vishay / Siliconix |
MOSFETs 60V Vds -/+20V Vgs AEC-Q101 Qualified |
auf Bestellung 16554 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3426AEEV-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 7A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 1328 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3426AEEV-T1_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 7A Automotive 6-Pin TSOP |
Produkt ist nicht verfügbar |
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SQ3426AEEV-T1_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 7A 6-Pin TSOP Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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SQ3426AEEV-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 7A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| SQ3426AEEV-T1_GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W Case: TSOP6 Mounting: SMD Kind of package: reel; tape On-state resistance: 71mΩ Power dissipation: 5W Drain current: 7A Gate-source voltage: ±20V Pulsed drain current: 29A Drain-source voltage: 60V Kind of channel: enhancement Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Gate charge: 14nC |
Produkt ist nicht verfügbar |