
auf Bestellung 7716 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
312+ | 0.48 EUR |
350+ | 0.41 EUR |
357+ | 0.39 EUR |
500+ | 0.34 EUR |
1000+ | 0.30 EUR |
3000+ | 0.28 EUR |
6000+ | 0.27 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQ3426AEEV-T1_GE3 Vishay
Description: MOSFET N-CH 60V 7A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V, Power Dissipation (Max): 5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQ3426AEEV-T1_GE3 nach Preis ab 0.27 EUR bis 1.81 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
SQ3426AEEV-T1_GE3 | Hersteller : Vishay |
![]() |
auf Bestellung 7716 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
![]() |
SQ3426AEEV-T1_GE3 | Hersteller : Vishay / Siliconix |
![]() |
auf Bestellung 16554 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
![]() |
SQ3426AEEV-T1_GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 1328 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
![]() |
SQ3426AEEV-T1_GE3 | Hersteller : Vishay |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||||||
![]() |
SQ3426AEEV-T1_GE3 | Hersteller : Vishay |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||||||
SQ3426AEEV-T1_GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W Drain-source voltage: 60V Drain current: 7A On-state resistance: 71mΩ Type of transistor: N-MOSFET Power dissipation: 5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 14nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 29A Mounting: SMD Case: TSOP6 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||||
![]() |
SQ3426AEEV-T1_GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||||||
SQ3426AEEV-T1_GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W Drain-source voltage: 60V Drain current: 7A On-state resistance: 71mΩ Type of transistor: N-MOSFET Power dissipation: 5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 14nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 29A Mounting: SMD Case: TSOP6 |
Produkt ist nicht verfügbar |