SQ3426AEEV-T1_GE3 Vishay / Siliconix
| Anzahl | Preis |
|---|---|
| 4+ | 0.8 EUR |
| 10+ | 0.79 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.45 EUR |
| 3000+ | 0.41 EUR |
| 6000+ | 0.4 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQ3426AEEV-T1_GE3 Vishay / Siliconix
Description: MOSFET N-CH 60V 7A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V, Power Dissipation (Max): 5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 6-TSOP, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote SQ3426AEEV-T1_GE3 nach Preis ab 0.52 EUR bis 1.81 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SQ3426AEEV-T1_GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 60V 7A 6TSOPCurrent - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 5W (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V |
auf Bestellung 1328 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SQ3426AEEV-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7A 6TSOP
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Description: MOSFET N-CH 60V 7A 6TSOP
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
auf Bestellung 1328 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.81 EUR |
| 16+ | 1.13 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.52 EUR |