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SQ3469EV-T1_BE3

SQ3469EV-T1_BE3 Vishay Siliconix


sq3469ev.pdf
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) 175C MOSFET
Qualification: AEC-Q101
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 25µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: P-Channel
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.37 EUR
6000+0.34 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SQ3469EV-T1_BE3 Vishay Siliconix

Description: P-CHANNEL 20-V (D-S) 175C MOSFET, Qualification: AEC-Q101, Grade: Automotive, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 2.5V @ 25µA, Power Dissipation (Max): 5W (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 6.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: P-Channel, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).

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SQ3469EV-T1_BE3 SQ3469EV-T1_BE3 Vishay Siliconix sq3469ev.pdf Description: P-CHANNEL 20-V (D-S) 175C MOSFET
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 25µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 7818 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.51 EUR
19+0.94 EUR
100+0.61 EUR
500+0.47 EUR
1000+0.43 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
SQ3469EV-T1_BE3 sq3469ev.pdf
SQ3469EV-T1_BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) 175C MOSFET
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 25µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 7818 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.51 EUR
19+0.94 EUR
100+0.61 EUR
500+0.47 EUR
1000+0.43 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH