SQ3989EV-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2P-CH 30V 2.5A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.67W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 400mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.31 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQ3989EV-T1_GE3 Vishay Siliconix
Description: MOSFET 2P-CH 30V 2.5A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.67W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc), Rds On (Max) @ Id, Vgs: 155mOhm @ 400mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 6-TSOP, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote SQ3989EV-T1_GE3 nach Preis ab 0.28 EUR bis 0.93 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SQ3989EV-T1_GE3 | Hersteller : Vishay Semiconductors |
MOSFET Dual P-Channel 30V TSOP-6 |
auf Bestellung 237505 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
SQ3989EV-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 30V 2.5A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.67W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 400mA, 10V Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 3172 Stücke: Lieferzeit 10-14 Tag (e) |
|