SQ3989EV-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 2.5A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.67W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 400mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.45 EUR |
| 6000+ | 0.42 EUR |
| 9000+ | 0.4 EUR |
| 15000+ | 0.38 EUR |
| 21000+ | 0.37 EUR |
| 30000+ | 0.36 EUR |
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Technische Details SQ3989EV-T1_GE3 Vishay Siliconix
Description: MOSFET 2P-CH 30V 2.5A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.67W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc), Rds On (Max) @ Id, Vgs: 155mOhm @ 400mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 6-TSOP, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote SQ3989EV-T1_GE3 nach Preis ab 0.4 EUR bis 1.87 EUR
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SQ3989EV-T1_GE3 | Vishay Semiconductors |
MOSFETs Dual P-Channel 30V TSOP-6 |
auf Bestellung 173495 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3989EV-T1_GE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 30V 2.5A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.67W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 400mA, 10V Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 81503 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SQ3989EV-T1_GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs Dual P-Channel 30V TSOP-6
MOSFETs Dual P-Channel 30V TSOP-6
auf Bestellung 173495 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.83 EUR |
| 10+ | 1.14 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.51 EUR |
| 3000+ | 0.44 EUR |
| 6000+ | 0.4 EUR |
| SQ3989EV-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 2.5A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.67W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 400mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2P-CH 30V 2.5A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.67W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 400mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 81503 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.87 EUR |
| 18+ | 1.17 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.52 EUR |