| Anzahl | Preis |
|---|---|
| 3+ | 1.21 EUR |
| 10+ | 1.05 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.52 EUR |
| 3000+ | 0.45 EUR |
| 6000+ | 0.42 EUR |
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Technische Details SQ3426EV-T1_BE3 Vishay / Siliconix
Description: MOSFET N-CHANNEL 60V 7A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V, Power Dissipation (Max): 5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 30 V.
Weitere Produktangebote SQ3426EV-T1_BE3 nach Preis ab 0.54 EUR bis 1.27 EUR
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SQ3426EV-T1_BE3 | Vishay Siliconix |
Description: MOSFET N-CHANNEL 60V 7A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 30 V |
auf Bestellung 1713 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SQ3426EV-T1_BE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 60V 7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 30 V
Description: MOSFET N-CHANNEL 60V 7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 30 V
auf Bestellung 1713 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 14+ | 1.27 EUR |
| 16+ | 1.12 EUR |
| 100+ | 0.86 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.54 EUR |