SQ3985EV-T1_GE3 Vishay / Siliconix
| Anzahl | Preis |
|---|---|
| 2+ | 1.81 EUR |
| 10+ | 1.14 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.52 EUR |
| 3000+ | 0.46 EUR |
| 6000+ | 0.42 EUR |
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Technische Details SQ3985EV-T1_GE3 Vishay / Siliconix
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 3W; TSOP6, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -3.9A, Power dissipation: 3W, Case: TSOP6, On-state resistance: 0.13Ω, Mounting: SMD, Kind of channel: enhancement, Application: automotive industry.
Weitere Produktangebote SQ3985EV-T1_GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| SQ3985EV-T1_GE3 | Hersteller : Vishay |
auf Bestellung 2965 Stücke: Lieferzeit 21-28 Tag (e) |
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| SQ3985EV-T1_GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 3W; TSOP6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.9A Power dissipation: 3W Case: TSOP6 On-state resistance: 0.13Ω Mounting: SMD Kind of channel: enhancement Application: automotive industry |
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