SQ4949EY-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2P-CH 30V 7.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 42500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.68 EUR |
| 5000+ | 1.61 EUR |
| 12500+ | 1.56 EUR |
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Technische Details SQ4949EY-T1_GE3 Vishay Siliconix
Description: MOSFET 2P-CH 30V 7.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.3W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V, Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQ4949EY-T1_GE3 nach Preis ab 1.67 EUR bis 3.74 EUR
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SQ4949EY-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 30V 7.5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 46146 Stücke: Lieferzeit 21-28 Tag (e) |
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SQ4949EY-T1_GE3 | Hersteller : Vishay Semiconductors |
MOSFET Dual P-Chnl 30-V D-S AEC-Q101 Qualified |
auf Bestellung 34764 Stücke: Lieferzeit 14-28 Tag (e) |
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| SQ4949EY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 7.5A Automotive 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SQ4949EY-T1_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 7.5A Automotive 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |