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SQ4949EY-T1_GE3

SQ4949EY-T1_GE3 Vishay Siliconix


sq4949ey.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 7.5A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
auf Bestellung 42500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.99 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SQ4949EY-T1_GE3 Vishay Siliconix

Description: MOSFET 2P-CH 30V 7.5A 8SOIC, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc), Drain to Source Voltage (Vdss): 30V, Power - Max: 3.3W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Part Status: Active.

Weitere Produktangebote SQ4949EY-T1_GE3 nach Preis ab 1.14 EUR bis 3.78 EUR

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SQ4949EY-T1_GE3 SQ4949EY-T1_GE3 Vishay Siliconix sq4949ey.pdf Description: MOSFET 2P-CH 30V 7.5A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Qualification: AEC-Q101
Grade: Automotive
Packaging: Cut Tape (CT)
auf Bestellung 45414 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.54 EUR
10+2.28 EUR
100+1.55 EUR
500+1.24 EUR
1000+1.21 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SQ4949EY-T1_GE3 SQ4949EY-T1_GE3 Vishay Semiconductors sq4949ey.pdf MOSFETs Dual P-Chnl 30-V D-S AEC-Q101 Qualified
auf Bestellung 31319 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.78 EUR
10+2.43 EUR
100+1.66 EUR
500+1.32 EUR
1000+1.22 EUR
2500+1.14 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SQ4949EY-T1_GE3 sq4949ey.pdf
SQ4949EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 7.5A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Qualification: AEC-Q101
Grade: Automotive
Packaging: Cut Tape (CT)
auf Bestellung 45414 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.54 EUR
10+2.28 EUR
100+1.55 EUR
500+1.24 EUR
1000+1.21 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SQ4949EY-T1_GE3 sq4949ey.pdf
SQ4949EY-T1_GE3
Hersteller: Vishay Semiconductors
MOSFETs Dual P-Chnl 30-V D-S AEC-Q101 Qualified
auf Bestellung 31319 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.78 EUR
10+2.43 EUR
100+1.66 EUR
500+1.32 EUR
1000+1.22 EUR
2500+1.14 EUR
Im Einkaufswagen  Stück im Wert von  UAH