SQD50N05-11L_GE3 Vishay / Siliconix
auf Bestellung 7938 Stücke:
Lieferzeit 310-324 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 3.98 EUR |
| 16+ | 3.41 EUR |
| 100+ | 2.73 EUR |
| 250+ | 2.63 EUR |
| 500+ | 2.26 EUR |
| 1000+ | 1.91 EUR |
| 2000+ | 1.78 EUR |
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Technische Details SQD50N05-11L_GE3 Vishay / Siliconix
Description: MOSFET N-CH 50V 50A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 45A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2106 pF @ 25 V.
Weitere Produktangebote SQD50N05-11L_GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SQD50N05-11L-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 50V 50A Automotive 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
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SQD50N05-11L-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 32A; 75W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 32A Power dissipation: 75W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 34.6nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQD50N05-11L_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 50V 50A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 45A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2106 pF @ 25 V |
Produkt ist nicht verfügbar |
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SQD50N05-11L_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 50V 50A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 45A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2106 pF @ 25 V |
Produkt ist nicht verfügbar |
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SQD50N05-11L-GE3 | Hersteller : Vishay / Siliconix | MOSFET RECOMMENDED ALT 78-SQD50N05-11L_GE3 |
Produkt ist nicht verfügbar |
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SQD50N05-11L-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 32A; 75W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 32A Power dissipation: 75W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 34.6nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |