SQD97N06-6M3L_GE3

SQD97N06-6M3L_GE3

SQD97N06-6M3L_GE3

Hersteller: Vishay / Siliconix
MOSFET 60V 97A 136W AEC-Q101 Qualified
VISH_S_A0001811632_1-2567912.pdf
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Technische Details SQD97N06-6M3L_GE3

Description: MOSFET N-CH 60V 97A TO252AA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 136W (Tc), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 25A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 6060 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Current - Continuous Drain (Id) @ 25°C: 97A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).

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SQD97N06-6M3L_GE3
SQD97N06-6M3L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 97A TO252AA
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
sqd97n06-6m3l.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD97N06-6M3L_GE3
SQD97N06-6M3L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 97A TO252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 6060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
sqd97n06-6m3l.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen