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SQD97N06-6m3L_GE3

SQD97N06-6m3L_GE3 Vishay / Siliconix

sqd97n06-6m3l.pdf Hersteller: Vishay / Siliconix
MOSFETs 60V 97A 136W AEC-Q101 Qualified
auf Bestellung 68530 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.08 EUR
10+2.15 EUR
100+1.59 EUR
500+1.27 EUR
1000+1.18 EUR
2000+1.1 EUR
4000+1.08 EUR
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Technische Details SQD97N06-6m3L_GE3 Vishay / Siliconix

Description: MOSFET N-CH 60V 97A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 97A (Tc), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 25A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6060 pF @ 25 V, Qualification: AEC-Q101.

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SQD97N06-6m3L_GE3 SQD97N06-6m3L_GE3 Hersteller : Vishay Siliconix sqd97n06-6m3l.pdf Description: MOSFET N-CH 60V 97A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6060 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1087 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.08 EUR
10+2.14 EUR
100+1.58 EUR
500+1.27 EUR
1000+1.24 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
SQD97N06-6m3L_GE3 Hersteller : VISHAY sqd97n06-6m3l.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 97A; 136W; DPAK,TO252AA; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 60V
Drain current: 97A
Power dissipation: 136W
Case: DPAK; TO252AA
Gate-source voltage: 20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 125nC
Kind of channel: enhancement
Application: automotive industry
Electrical mounting: SMT
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+1.1 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
SQD97N06-6M3L_GE3 SQD97N06-6M3L_GE3 Hersteller : Vishay sqd97n06-6m3l.pdf Trans MOSFET N-CH 60V 97A Automotive 3-Pin(2+Tab) DPAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQD97N06-6m3L_GE3 SQD97N06-6m3L_GE3 Hersteller : Vishay Siliconix sqd97n06-6m3l.pdf Description: MOSFET N-CH 60V 97A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6060 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH