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SQJ423EP-T1_GE3

SQJ423EP-T1_GE3 Vishay Siliconix

sqj423ep.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 55A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.07 EUR
6000+ 1.02 EUR
9000+ 0.97 EUR
Mindestbestellmenge: 3000
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Technische Details SQJ423EP-T1_GE3 Vishay Siliconix

Description: MOSFET P-CH 40V 55A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote SQJ423EP-T1_GE3 nach Preis ab 1.03 EUR bis 2.6 EUR

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SQJ423EP-T1_GE3 SQJ423EP-T1_GE3 Hersteller : Vishay Siliconix sqj423ep.pdf Description: MOSFET P-CH 40V 55A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 17289 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.6 EUR
13+ 2.12 EUR
100+ 1.65 EUR
500+ 1.4 EUR
1000+ 1.14 EUR
Mindestbestellmenge: 10
SQJ423EP-T1_GE3 SQJ423EP-T1_GE3 Hersteller : Vishay Semiconductors sqj423ep.pdf MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified
auf Bestellung 111632 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
20+2.6 EUR
25+ 2.13 EUR
100+ 1.66 EUR
500+ 1.41 EUR
1000+ 1.15 EUR
3000+ 1.08 EUR
6000+ 1.03 EUR
Mindestbestellmenge: 20
SQJ423EP-T1_GE3 SQJ423EP-T1_GE3 Hersteller : Vishay sqj423ep.pdf Trans MOSFET P-CH 40V 55A Automotive 5-Pin(4+Tab) PowerPAK SO T/R
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