Produkte > VISHAY SILICONIX > SQJ423EP-T1_GE3
SQJ423EP-T1_GE3

SQJ423EP-T1_GE3 Vishay Siliconix

sqj423ep.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 55A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.72 EUR
6000+ 0.69 EUR
9000+ 0.66 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details SQJ423EP-T1_GE3 Vishay Siliconix

Description: MOSFET P-CH 40V 55A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote SQJ423EP-T1_GE3 nach Preis ab 0.7 EUR bis 1.76 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SQJ423EP-T1_GE3 SQJ423EP-T1_GE3 Hersteller : Vishay Semiconductors sqj423ep.pdf MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified
auf Bestellung 111632 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.76 EUR
10+ 1.44 EUR
100+ 1.12 EUR
500+ 0.95 EUR
1000+ 0.78 EUR
3000+ 0.73 EUR
6000+ 0.7 EUR
Mindestbestellmenge: 2
SQJ423EP-T1_GE3 SQJ423EP-T1_GE3 Hersteller : Vishay Siliconix sqj423ep.pdf Description: MOSFET P-CH 40V 55A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 17289 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.76 EUR
13+ 1.43 EUR
100+ 1.11 EUR
500+ 0.94 EUR
1000+ 0.77 EUR
Mindestbestellmenge: 10
SQJ423EP-T1_GE3 SQJ423EP-T1_GE3 Hersteller : Vishay sqj423ep.pdf Trans MOSFET P-CH 40V 55A Automotive 5-Pin(4+Tab) PowerPAK SO T/R
Produkt ist nicht verfügbar