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SQJ433EP-T1_GE3

SQJ433EP-T1_GE3 Vishay Siliconix


sqj433ep.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 75A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 16A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4877 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.33 EUR
Mindestbestellmenge: 3000
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Technische Details SQJ433EP-T1_GE3 Vishay Siliconix

Description: MOSFET P-CH 30V 75A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 8.1mOhm @ 16A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4877 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote SQJ433EP-T1_GE3 nach Preis ab 1.29 EUR bis 3.28 EUR

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SQJ433EP-T1_GE3 SQJ433EP-T1_GE3 Hersteller : Vishay Siliconix sqj433ep.pdf Description: MOSFET P-CH 30V 75A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 16A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4877 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5524 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.22 EUR
10+ 2.64 EUR
100+ 2.05 EUR
500+ 1.74 EUR
1000+ 1.42 EUR
Mindestbestellmenge: 9
SQJ433EP-T1_GE3 SQJ433EP-T1_GE3 Hersteller : Vishay Semiconductors sqj433ep.pdf MOSFET P Ch -30Vds 20Vgs AEC-Q101 Qualified
auf Bestellung 2843 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
16+3.28 EUR
20+ 2.68 EUR
100+ 2.09 EUR
500+ 1.77 EUR
1000+ 1.44 EUR
3000+ 1.35 EUR
6000+ 1.29 EUR
Mindestbestellmenge: 16
SQJ433EP-T1_GE3 SQJ433EP-T1_GE3 Hersteller : Vishay sqj433ep.pdf Trans MOSFET P-CH 30V 75A Automotive 5-Pin(4+Tab) PowerPAK SO
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SQJ433EP-T1_GE3 SQJ433EP-T1_GE3 Hersteller : Vishay sqj433ep.pdf Trans MOSFET P-CH 30V 75A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R
Produkt ist nicht verfügbar