SQJ433EP-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 75A PPAK SO-8
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4877 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details SQJ433EP-T1_GE3 Vishay Siliconix
Description: MOSFET P-CH 30V 75A PPAK SO-8, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 4877 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 83W (Tc), Rds On (Max) @ Id, Vgs: 8.1mOhm @ 16A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SQJ433EP-T1_GE3 nach Preis ab 0.87 EUR bis 3.19 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SQJ433EP-T1_GE3 | Vishay Semiconductors |
MOSFETs P Ch -30Vds 20Vgs AEC-Q101 Qualified |
auf Bestellung 2823 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
SQJ433EP-T1_GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 75A PPAK SO-8 Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 8.1mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Qualification: AEC-Q101 Grade: Automotive Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 4877 pF @ 15 V Package / Case: PowerPAK® SO-8 |
auf Bestellung 4973 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SQJ433EP-T1_GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs P Ch -30Vds 20Vgs AEC-Q101 Qualified
MOSFETs P Ch -30Vds 20Vgs AEC-Q101 Qualified
auf Bestellung 2823 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.22 EUR |
| 10+ | 1.81 EUR |
| 100+ | 1.41 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 0.97 EUR |
| 3000+ | 0.92 EUR |
| 6000+ | 0.87 EUR |
| SQJ433EP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 75A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4877 pF @ 15 V
Package / Case: PowerPAK® SO-8
Description: MOSFET P-CH 30V 75A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4877 pF @ 15 V
Package / Case: PowerPAK® SO-8
auf Bestellung 4973 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.19 EUR |
| 10+ | 2.04 EUR |
| 100+ | 1.37 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 1 EUR |