SQJ974EP-T1_GE3 Vishay Semiconductors
auf Bestellung 59147 Stücke:
Lieferzeit 512-526 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
16+ | 3.41 EUR |
18+ | 2.99 EUR |
100+ | 2.36 EUR |
500+ | 1.9 EUR |
1000+ | 1.5 EUR |
3000+ | 1.31 EUR |
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Technische Details SQJ974EP-T1_GE3 Vishay Semiconductors
Description: MOSFET 2 N-CH 100V POWERPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 48W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V, Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual, Part Status: Active.
Weitere Produktangebote SQJ974EP-T1_GE3 nach Preis ab 1.9 EUR bis 3.54 EUR
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SQJ974EP-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2 N-CH 100V POWERPAK SO8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 48W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Part Status: Active |
auf Bestellung 853 Stücke: Lieferzeit 21-28 Tag (e) |
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SQJ974EP-T1_GE3 | Hersteller : Vishay | Trans MOSFET N-CH 100V 30A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R |
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SQJ974EP-T1_GE3 | Hersteller : Vishay | Trans MOSFET N-CH 100V 30A Automotive 5-Pin(4+Tab) PowerPAK SO T/R |
Produkt ist nicht verfügbar |
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SQJ974EP-T1_GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 17A; 16W; PowerPAK® SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 17A Power dissipation: 16W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 25.5mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQJ974EP-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2 N-CH 100V POWERPAK SO8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 48W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Part Status: Active |
Produkt ist nicht verfügbar |
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SQJ974EP-T1_GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 17A; 16W; PowerPAK® SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 17A Power dissipation: 16W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 25.5mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |