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SQJ974EP-T1_GE3

SQJ974EP-T1_GE3 Vishay Semiconductors


sqj974ep.pdf Hersteller: Vishay Semiconductors
MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified
auf Bestellung 59147 Stücke:

Lieferzeit 512-526 Tag (e)
Anzahl Preis ohne MwSt
16+3.41 EUR
18+ 2.99 EUR
100+ 2.36 EUR
500+ 1.9 EUR
1000+ 1.5 EUR
3000+ 1.31 EUR
Mindestbestellmenge: 16
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Technische Details SQJ974EP-T1_GE3 Vishay Semiconductors

Description: MOSFET 2 N-CH 100V POWERPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 48W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V, Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual, Part Status: Active.

Weitere Produktangebote SQJ974EP-T1_GE3 nach Preis ab 1.9 EUR bis 3.54 EUR

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Preis ohne MwSt
SQJ974EP-T1_GE3 SQJ974EP-T1_GE3 Hersteller : Vishay Siliconix sqj974ep.pdf Description: MOSFET 2 N-CH 100V POWERPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 853 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.54 EUR
10+ 2.88 EUR
100+ 2.24 EUR
500+ 1.9 EUR
Mindestbestellmenge: 8
SQJ974EP-T1_GE3 SQJ974EP-T1_GE3 Hersteller : Vishay sqj974ep.pdf Trans MOSFET N-CH 100V 30A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R
Produkt ist nicht verfügbar
SQJ974EP-T1_GE3 SQJ974EP-T1_GE3 Hersteller : Vishay sqj974ep.pdf Trans MOSFET N-CH 100V 30A Automotive 5-Pin(4+Tab) PowerPAK SO T/R
Produkt ist nicht verfügbar
SQJ974EP-T1_GE3 Hersteller : VISHAY SQJ974EP-T1-GE3.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 17A; 16W; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 16W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 25.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SQJ974EP-T1_GE3 SQJ974EP-T1_GE3 Hersteller : Vishay Siliconix sqj974ep.pdf Description: MOSFET 2 N-CH 100V POWERPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Produkt ist nicht verfügbar
SQJ974EP-T1_GE3 Hersteller : VISHAY SQJ974EP-T1-GE3.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 17A; 16W; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 16W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 25.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar