SQJB42EP-T1_GE3

SQJB42EP-T1_GE3

Hersteller: Vishay / Siliconix
MOSFET Dual N-Channel 40V PowerPAK
sqjb42ep-1099810.pdf
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auf Bestellung 1967 Stücke
Lieferzeit 14-28 Tag (e)

Technische Details SQJB42EP-T1_GE3

Description: MOSFET 2 N-CH 40V POWERPAK SO8, Supplier Device Package: PowerPAK® SO-8 Dual, Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Power - Max: 48W, Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Feature: Standard, Drain to Source Voltage (Vdss): 40V, FET Type: 2 N-Channel (Dual), Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $).

Preis SQJB42EP-T1_GE3 ab 0 EUR bis 0 EUR

SQJB42EP-T1_GE3
SQJB42EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 40V POWERPAK SO8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 48W
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
sqjb42ep.pdf
auf Bestellung 2107 Stücke
Lieferzeit 21-28 Tag (e)
SQJB42EP-T1_GE3
SQJB42EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 40V POWERPAK SO8
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 48W
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
sqjb42ep.pdf
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SQJB42EP-T1_GE3
SQJB42EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 40V POWERPAK SO8
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 48W
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
sqjb42ep.pdf
auf Bestellung 2107 Stücke
Lieferzeit 21-28 Tag (e)