SQJB42EP-T1_GE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 1967 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 1967 Stücke

Lieferzeit 14-28 Tag (e)
Technische Details SQJB42EP-T1_GE3
Description: MOSFET 2 N-CH 40V POWERPAK SO8, Supplier Device Package: PowerPAK® SO-8 Dual, Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Power - Max: 48W, Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Feature: Standard, Drain to Source Voltage (Vdss): 40V, FET Type: 2 N-Channel (Dual), Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $).
Preis SQJB42EP-T1_GE3 ab 0 EUR bis 0 EUR
SQJB42EP-T1_GE3 Hersteller: Vishay Siliconix Description: MOSFET 2 N-CH 40V POWERPAK SO8 Supplier Device Package: PowerPAK® SO-8 Dual Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 48W Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Feature: Standard Drain to Source Voltage (Vdss): 40V FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) ![]() |
auf Bestellung 2107 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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SQJB42EP-T1_GE3 Hersteller: Vishay Siliconix Description: MOSFET 2 N-CH 40V POWERPAK SO8 Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 40V FET Feature: Standard FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Tape & Reel (TR) Supplier Device Package: PowerPAK® SO-8 Dual Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 48W Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V ![]() |
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SQJB42EP-T1_GE3 Hersteller: Vishay Siliconix Description: MOSFET 2 N-CH 40V POWERPAK SO8 Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 48W Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 40V FET Type: 2 N-Channel (Dual) FET Feature: Standard Part Status: Active Packaging: Cut Tape (CT) Supplier Device Package: PowerPAK® SO-8 Dual Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount ![]() |
auf Bestellung 2107 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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