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SQJB42EP-T1_GE3

SQJB42EP-T1_GE3 Vishay / Siliconix

sqjb42ep.pdf Hersteller: Vishay / Siliconix
MOSFET Dual N-Channel 40V PowerPAK
auf Bestellung 33013 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.06 EUR
10+ 1.67 EUR
100+ 1.31 EUR
500+ 1.11 EUR
1000+ 0.9 EUR
6000+ 0.81 EUR
Mindestbestellmenge: 2
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Technische Details SQJB42EP-T1_GE3 Vishay / Siliconix

Description: MOSFET 2 N-CH 40V POWERPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 48W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V, Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual, Part Status: Active.

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SQJB42EP-T1_GE3 SQJB42EP-T1_GE3 Hersteller : Vishay Siliconix sqjb42ep.pdf Description: MOSFET 2 N-CH 40V POWERPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 2700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.31 EUR
10+ 2.06 EUR
100+ 1.6 EUR
500+ 1.33 EUR
1000+ 1.05 EUR
Mindestbestellmenge: 8
SQJB42EP-T1_GE3 SQJB42EP-T1_GE3 Hersteller : Vishay Siliconix sqjb42ep.pdf Description: MOSFET 2 N-CH 40V POWERPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
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