SQJB68EP-T1_GE3

SQJB68EP-T1_GE3

SQJB68EP-T1_GE3

Hersteller: Vishay
Trans MOSFET N-CH 100V 11A Automotive 5-Pin(4+Tab) PowerPAK SO T/R
sqjb68ep.pdf
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Technische Details SQJB68EP-T1_GE3

Description: MOSFET 2 N-CH 100V POWERPAK SO8, Supplier Device Package: PowerPAK® SO-8 Dual, Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Power - Max: 27W, Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V, Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Drain to Source Voltage (Vdss): 100V, FET Feature: Standard, FET Type: 2 N-Channel (Dual), Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $).

Preis SQJB68EP-T1_GE3 ab 0 EUR bis 0 EUR

SQJB68EP-T1_GE3
SQJB68EP-T1_GE3
Hersteller: Vishay / Siliconix
MOSFET 100V Vds 20V Vgs PowerPAK SO-8L
sqjb68ep-1766304.pdf
auf Bestellung 26990 Stücke
Lieferzeit 14-28 Tag (e)
SQJB68EP-T1_GE3
SQJB68EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 100V POWERPAK SO8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
sqjb68ep.pdf
auf Bestellung 411 Stücke
Lieferzeit 21-28 Tag (e)
SQJB68EP-T1_GE3
SQJB68EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 100V POWERPAK SO8
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: 2 N-Channel (Dual)
Power - Max: 27W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
sqjb68ep.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJB68EP-T1_GE3
SQJB68EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 100V POWERPAK SO8
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: 2 N-Channel (Dual)
Power - Max: 27W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
sqjb68ep.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen