SQJQ100E-T1_GE3

SQJQ100E-T1_GE3

SQJQ100E-T1_GE3

Hersteller: Vishay
Trans MOSFET N-CH 40V 200A Automotive 5-Pin(4+Tab) PowerPAK
sqjq100e.pdf
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Technische Details SQJQ100E-T1_GE3

Description: MOSFET N-CH 40V 200A POWERPAK8, Package / Case: 8-PowerTDFN, Technology: MOSFET (Metal Oxide), Supplier Device Package: PowerPAK® 8 x 8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 150W (Tc), FET Type: N-Channel, Part Status: Active, Input Capacitance (Ciss) (Max) @ Vds: 14780pF @ 25V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), Drain to Source Voltage (Vdss): 40V, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $).

Preis SQJQ100E-T1_GE3 ab 0 EUR bis 0 EUR

SQJQ100E-T1_GE3
SQJQ100E-T1_GE3
Hersteller: Vishay Semiconductors
MOSFET 40V Vds 160A Id AEC-Q101 Qualified
sqjq100e.pdf sqjq100e.pdf
auf Bestellung 1468 Stücke
Lieferzeit 14-28 Tag (e)
SQJQ100E-T1_GE3
SQJQ100E-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 200A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 14780 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8
Packaging: Cut Tape (CT)
sqjq100e.pdf
auf Bestellung 1970 Stücke
Lieferzeit 21-28 Tag (e)
SQJQ100E-T1_GE3
SQJQ100E-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 200A POWERPAK8
Package / Case: 8-PowerTDFN
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Type: N-Channel
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 14780pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Drain to Source Voltage (Vdss): 40V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
sqjq100e.pdf
auf Bestellung 1975 Stücke
Lieferzeit 21-28 Tag (e)
SQJQ100E-T1_GE3
SQJQ100E-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 200A PPAK 8 X 8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 14780 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Package / Case: PowerPAK® 8 x 8
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
sqjq100e.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen