SQJQ100E-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 40V 200A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14780 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 11208 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 2.21 EUR |
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Technische Details SQJQ100E-T1_GE3 Vishay Siliconix
Description: MOSFET N-CH 40V 200A PPAK 8 X 8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 8 x 8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14780 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SQJQ100E-T1_GE3 nach Preis ab 2.29 EUR bis 6.07 EUR
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SQJQ100E-T1_GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 40V Vds 160A Id AEC-Q101 Qualified |
auf Bestellung 13890 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJQ100E-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 200A PPAK 8 X 8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14780 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 11317 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJQ100E-T1_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 200A Automotive 5-Pin(4+Tab) PowerPAK |
Produkt ist nicht verfügbar |