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SQJQ910EL-T1_GE3

SQJQ910EL-T1_GE3 Vishay / Siliconix


sqjq910el.pdf Hersteller: Vishay / Siliconix
MOSFET 100V Vds Dual N-Ch AEC-Q101 Qualified
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Technische Details SQJQ910EL-T1_GE3 Vishay / Siliconix

Description: MOSFET 2N-CH 100V 70A PPAK8X8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 8 x 8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 187W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2832pF @ 50V, Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8 Dual.

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SQJQ910EL-T1_GE3
Produktcode: 151182
sqjq910el.pdf Transistoren > MOSFET N-CH
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SQJQ910EL-T1_GE3 SQJQ910EL-T1_GE3 Hersteller : Vishay sqjq910el.pdf Trans MOSFET N-CH 100V 70A Automotive 5-Pin(4+Tab) PowerPAK T/R
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SQJQ910EL-T1_GE3 SQJQ910EL-T1_GE3 Hersteller : Vishay sqjq910el.pdf Trans MOSFET N-CH 100V 70A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK T/R
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SQJQ910EL-T1_GE3 SQJQ910EL-T1_GE3 Hersteller : Vishay Siliconix sqjq910el.pdf Description: MOSFET 2N-CH 100V 70A PPAK8X8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 187W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2832pF @ 50V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8 Dual
Produkt ist nicht verfügbar
SQJQ910EL-T1_GE3 SQJQ910EL-T1_GE3 Hersteller : Vishay Siliconix sqjq910el.pdf Description: MOSFET 2N-CH 100V 70A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 187W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2832pF @ 50V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8 Dual
Produkt ist nicht verfügbar