Weitere Produktangebote SQJQ910EL-T1_GE3 nach Preis ab 2.17 EUR bis 6.41 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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SQJQ910EL-T1_GE3 | Vishay Siliconix |
 Description: MOSFET 2N-CH 100V 70A PPAK8X8Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 8 x 8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 187W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2832pF @ 50V Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Dual Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJQ910EL-T1_GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 100V 70A PPAK8X8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 8 x 8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 187W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2832pF @ 50V Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Dual Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6232 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJQ910EL-T1_GE3 | Vishay / Siliconix |
MOSFETs 100V Vds Dual N-Ch AEC-Q101 Qualified |
auf Bestellung 44397 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJQ910EL-T1_GE3 | VISHAY |
Description: VISHAY - SQJQ910EL-T1_GE3 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 70 A, 70 A, 7200 µohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 70A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 100V Dauer-Drainstrom Id, n-Kanal: 70A Drain-Source-Durchgangswiderstand, p-Kanal: 7200µohm Verlustleistung, p-Kanal: 187W Drain-Source-Spannung Vds, n-Kanal: 100V SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: PowerPAK SO Anzahl der Pins: 4Pin(s) Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 7200µohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 187W Betriebstemperatur, max.: 175°C |
auf Bestellung 1716 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SQJQ910EL-T1_GE3 | VISHAY |
Description: VISHAY - SQJQ910EL-T1_GE3 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 70 A, 70 A, 7200 µohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 70A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 100V Dauer-Drainstrom Id, n-Kanal: 70A Drain-Source-Durchgangswiderstand, p-Kanal: 7200µohm Verlustleistung, p-Kanal: 187W Drain-Source-Spannung Vds, n-Kanal: 100V SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: PowerPAK SO Anzahl der Pins: 4Pin(s) Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 7200µohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 187W Betriebstemperatur, max.: 175°C |
auf Bestellung 1716 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SQJQ910EL-T1_GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 70A PPAK8X8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 187W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2832pF @ 50V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8 Dual
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 70A PPAK8X8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 187W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2832pF @ 50V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8 Dual
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 2.25 EUR |
| 6000+ | 2.17 EUR |
| SQJQ910EL-T1_GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 70A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 187W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2832pF @ 50V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8 Dual
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 70A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 187W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2832pF @ 50V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8 Dual
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6232 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.01 EUR |
| 10+ | 4.15 EUR |
| 100+ | 3.31 EUR |
| 500+ | 2.8 EUR |
| 1000+ | 2.37 EUR |
| SQJQ910EL-T1_GE3 |
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Hersteller: Vishay / Siliconix
MOSFETs 100V Vds Dual N-Ch AEC-Q101 Qualified
MOSFETs 100V Vds Dual N-Ch AEC-Q101 Qualified
auf Bestellung 44397 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.41 EUR |
| 10+ | 4.16 EUR |
| 100+ | 2.95 EUR |
| 500+ | 2.4 EUR |
| 1000+ | 2.39 EUR |
| 2000+ | 2.23 EUR |
| SQJQ910EL-T1_GE3 |
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Hersteller: VISHAY
Description: VISHAY - SQJQ910EL-T1_GE3 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 70 A, 70 A, 7200 µohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 70A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 100V
Dauer-Drainstrom Id, n-Kanal: 70A
Drain-Source-Durchgangswiderstand, p-Kanal: 7200µohm
Verlustleistung, p-Kanal: 187W
Drain-Source-Spannung Vds, n-Kanal: 100V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 4Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 7200µohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 187W
Betriebstemperatur, max.: 175°C
Description: VISHAY - SQJQ910EL-T1_GE3 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 70 A, 70 A, 7200 µohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 70A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 100V
Dauer-Drainstrom Id, n-Kanal: 70A
Drain-Source-Durchgangswiderstand, p-Kanal: 7200µohm
Verlustleistung, p-Kanal: 187W
Drain-Source-Spannung Vds, n-Kanal: 100V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 4Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 7200µohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 187W
Betriebstemperatur, max.: 175°C
auf Bestellung 1716 Stücke:
Lieferzeit 14-21 Tag (e)
| SQJQ910EL-T1_GE3 |
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Hersteller: VISHAY
Description: VISHAY - SQJQ910EL-T1_GE3 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 70 A, 70 A, 7200 µohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 70A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 100V
Dauer-Drainstrom Id, n-Kanal: 70A
Drain-Source-Durchgangswiderstand, p-Kanal: 7200µohm
Verlustleistung, p-Kanal: 187W
Drain-Source-Spannung Vds, n-Kanal: 100V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 4Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 7200µohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 187W
Betriebstemperatur, max.: 175°C
Description: VISHAY - SQJQ910EL-T1_GE3 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 70 A, 70 A, 7200 µohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 70A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 100V
Dauer-Drainstrom Id, n-Kanal: 70A
Drain-Source-Durchgangswiderstand, p-Kanal: 7200µohm
Verlustleistung, p-Kanal: 187W
Drain-Source-Spannung Vds, n-Kanal: 100V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 4Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 7200µohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 187W
Betriebstemperatur, max.: 175°C
auf Bestellung 1716 Stücke:
Lieferzeit 14-21 Tag (e)