SQM100N10-10_GE3

SQM100N10-10_GE3

SQM100N10-10_GE3

Hersteller: Vishay
Automotive N-Channel MOSFET
sqm100n1.pdf
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Technische Details SQM100N10-10_GE3

Description: MOSFET N-CH 100V 100A TO-263, Input Capacitance (Ciss) (Max) @ Vds: 8050pF @ 25V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Drain to Source Voltage (Vdss): 100V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Supplier Device Package: TO-263 (D2Pak), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 375W (Tc).

Preis SQM100N10-10_GE3 ab 0 EUR bis 0 EUR

SQM100N10-10_GE3
SQM100N10-10_GE3
Hersteller: Vishay / Siliconix
MOSFET 100V 100A 375W AEC-Q101 Qualified
VISH_S_A0001222646_1-2567301.pdf
auf Bestellung 620 Stücke
Lieferzeit 14-28 Tag (e)
SQM100N10-10_GE3
SQM100N10-10_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 100A TO-263
Base Part Number: SQM100N
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8050pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
sqm100n1.pdf
auf Bestellung 673 Stücke
Lieferzeit 21-28 Tag (e)
SQM100N10-10_GE3
SQM100N10-10_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 100A TO-263
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8050pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Base Part Number: SQM100N
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
sqm100n1.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQM100N10-10_GE3
SQM100N10-10_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 100A TO-263
Input Capacitance (Ciss) (Max) @ Vds: 8050pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
sqm100n1.pdf
auf Bestellung 235 Stücke
Lieferzeit 21-28 Tag (e)