Produkte > VISHAY SILICONIX > SQM100N10-10_GE3
SQM100N10-10_GE3

SQM100N10-10_GE3 Vishay Siliconix

sqm100n1.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 100A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8050 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
800+4.35 EUR
Mindestbestellmenge: 800
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Technische Details SQM100N10-10_GE3 Vishay Siliconix

Description: MOSFET N-CH 100V 100A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8050 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote SQM100N10-10_GE3 nach Preis ab 3.74 EUR bis 7.25 EUR

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SQM100N10-10_GE3 SQM100N10-10_GE3 Hersteller : Vishay Siliconix sqm100n1.pdf Description: MOSFET N-CH 100V 100A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8050 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 917 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.2 EUR
10+ 6.05 EUR
100+ 4.9 EUR
Mindestbestellmenge: 4
SQM100N10-10_GE3 SQM100N10-10_GE3 Hersteller : Vishay / Siliconix sqm100n1.pdf MOSFET 100V 100A 375W AEC-Q101 Qualified
auf Bestellung 2419 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+7.25 EUR
10+ 6.11 EUR
25+ 5.75 EUR
100+ 4.94 EUR
250+ 4.65 EUR
500+ 4.39 EUR
800+ 3.74 EUR
Mindestbestellmenge: 8
SQM100N10-10_GE3 SQM100N10-10_GE3 Hersteller : Vishay sqm100n1.pdf Automotive N-Channel MOSFET
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SQM100N10-10-GE3 Hersteller : Vishay sqm100n1.pdf Automotive N-Channel MOSFET
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SQM100N10-10-GE3 SQM100N10-10-GE3 Hersteller : Vishay / Siliconix MOSFET RECOMMENDED ALT SQM100N10-10_GE3
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