SQM100N10-10_GE3
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Technische Details SQM100N10-10_GE3
Description: MOSFET N-CH 100V 100A TO-263, Input Capacitance (Ciss) (Max) @ Vds: 8050pF @ 25V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Drain to Source Voltage (Vdss): 100V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Supplier Device Package: TO-263 (D2Pak), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 375W (Tc).
Preis SQM100N10-10_GE3 ab 0 EUR bis 0 EUR
 Hersteller: Vishay / Siliconix MOSFET 100V 100A 375W AEC-Q101 Qualified 
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auf Bestellung 620 Stücke  Lieferzeit 14-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 100V 100A TO-263 Base Part Number: SQM100N Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 375W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 8050pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT)
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auf Bestellung 673 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 100V 100A TO-263 Power Dissipation (Max): 375W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 8050pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V Base Part Number: SQM100N Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR)
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 100V 100A TO-263 Input Capacitance (Ciss) (Max) @ Vds: 8050pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 375W (Tc)
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auf Bestellung 235 Stücke Lieferzeit 21-28 Tag (e) |
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