SQM100N10-10_GE3 Vishay / Siliconix
auf Bestellung 2418 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.91 EUR |
| 10+ | 4.14 EUR |
| 25+ | 3.89 EUR |
| 100+ | 3.34 EUR |
| 250+ | 3.15 EUR |
| 500+ | 2.97 EUR |
| 800+ | 2.53 EUR |
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Technische Details SQM100N10-10_GE3 Vishay / Siliconix
Description: MOSFET N-CH 100V 100A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8050 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQM100N10-10_GE3 nach Preis ab 3.36 EUR bis 4.95 EUR
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SQM100N10-10_GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 100V 100A TO263Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8050 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 911 Stücke: Lieferzeit 10-14 Tag (e) |
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SQM100N10-10_GE3 | Hersteller : Vishay |
Automotive N-Channel MOSFET |
Produkt ist nicht verfügbar |
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| SQM100N10-10-GE3 | Hersteller : Vishay |
Automotive N-Channel MOSFET |
Produkt ist nicht verfügbar |
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SQM100N10-10_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 100A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8050 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SQM100N10-10-GE3 | Hersteller : Vishay / Siliconix | MOSFET RECOMMENDED ALT SQM100N10-10_GE3 |
Produkt ist nicht verfügbar |