SQM100P10-19L_GE3 Vishay
auf Bestellung 31200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 2.82 EUR |
Produktrezensionen
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Technische Details SQM100P10-19L_GE3 Vishay
Description: MOSFET P-CH 100V 93A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 93A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14100 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SQM100P10-19L_GE3 nach Preis ab 2.54 EUR bis 5.4 EUR
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SQM100P10-19L_GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 100V 93A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 31200 Stücke: Lieferzeit 14-21 Tag (e) |
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SQM100P10-19L_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 100V 93A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 93A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14100 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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SQM100P10-19L_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 100V 93A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 93A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14100 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2592 Stücke: Lieferzeit 10-14 Tag (e) |
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SQM100P10-19L_GE3 | Hersteller : Vishay / Siliconix |
MOSFETs P Ch -100Vds 20Vgs AEC-Q101 Qualified |
auf Bestellung 8877 Stücke: Lieferzeit 10-14 Tag (e) |
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SQM100P10-19L_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQM100P10-19L_GE3 - Leistungs-MOSFET, p-Kanal, 100 V, 93 A, 0.0155 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 93A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pins Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0155ohm SVHC: To Be Advised |
auf Bestellung 451 Stücke: Lieferzeit 14-21 Tag (e) |
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SQM100P10-19L_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQM100P10-19L_GE3 - Leistungs-MOSFET, p-Kanal, 100 V, 93 A, 0.0155 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 93A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pins Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0155ohm SVHC: To Be Advised |
auf Bestellung 451 Stücke: Lieferzeit 14-21 Tag (e) |
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SQM100P10-19L_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 93A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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SQM100P10-19L_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 93A Automotive 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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SQM100P10-19L_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 93A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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SQM100P10-19L_GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -53A; 125W; D2PAK,TO263 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -53A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: SMD Gate charge: 0.22µC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQM100P10-19L_GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -53A; 125W; D2PAK,TO263 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -53A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: SMD Gate charge: 0.22µC Kind of channel: enhanced |
Produkt ist nicht verfügbar |