Produkte > VISHAY SILICONIX > SQM100P10-19L_GE3
SQM100P10-19L_GE3

SQM100P10-19L_GE3 Vishay Siliconix

sqm100p10-19l.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 93A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14100 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.71 EUR
1600+2.6 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SQM100P10-19L_GE3 Vishay Siliconix

Description: MOSFET P-CH 100V 93A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 93A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14100 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote SQM100P10-19L_GE3 nach Preis ab 2.43 EUR bis 7.41 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SQM100P10-19L_GE3 SQM100P10-19L_GE3 Vishay / Siliconix sqm100p10-19l.pdf MOSFETs P Ch -100Vds 20Vgs AEC-Q101 Qualified
auf Bestellung 3875 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.42 EUR
10+4.4 EUR
100+3.12 EUR
500+2.99 EUR
800+2.43 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SQM100P10-19L_GE3 SQM100P10-19L_GE3 Vishay Siliconix sqm100p10-19l.pdf Description: MOSFET P-CH 100V 93A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14100 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2104 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.41 EUR
10+4.89 EUR
100+3.46 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SQM100P10-19L"GE3 SQM100P10-19L"GE3 VISHAY Description: VISHAY - SQM100P10-19L"GE3 - MOSFET, P-CH, 100V, 93A, TO-263
tariffCode: 0
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 93A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 375W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: P Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.019ohm
directShipCharge: 25
SVHC: To Be Advised
auf Bestellung 708 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SQM100P10-19L_GE3 sqm100p10-19l.pdf
SQM100P10-19L_GE3
Hersteller: Vishay / Siliconix
MOSFETs P Ch -100Vds 20Vgs AEC-Q101 Qualified
auf Bestellung 3875 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.42 EUR
10+4.4 EUR
100+3.12 EUR
500+2.99 EUR
800+2.43 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SQM100P10-19L_GE3 sqm100p10-19l.pdf
SQM100P10-19L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 93A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14100 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2104 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.41 EUR
10+4.89 EUR
100+3.46 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SQM100P10-19L"GE3
SQM100P10-19L"GE3
Hersteller: VISHAY
Description: VISHAY - SQM100P10-19L"GE3 - MOSFET, P-CH, 100V, 93A, TO-263
tariffCode: 0
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 93A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 375W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: P Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.019ohm
directShipCharge: 25
SVHC: To Be Advised
auf Bestellung 708 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH