SQM120P04-04L_GE3

SQM120P04-04L_GE3

SQM120P04-04L_GE3

Hersteller: Vishay / Siliconix
MOSFET P-Channel 40V AEC-Q101 Qualified
sqm120p0-534705.pdf
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auf Bestellung 1479 Stücke
Lieferzeit 14-28 Tag (e)

Technische Details SQM120P04-04L_GE3

Description: MOSFET P-CH 40V 120A TO263, Manufacturer: Vishay Siliconix, Packaging: Tape & Reel (TR), Part Status: Active, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 13980pF @ 20V, Power Dissipation (Max): 375W (Tc), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: TO-263 (D²Pak), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Base Part Number: SQM120.

Preis SQM120P04-04L_GE3 ab 0 EUR bis 0 EUR

SQM120P04-04L_GE3
SQM120P04-04L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 120A TO263
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 13980pF @ 20V
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SQM120
sqm120p0.pdf
auf Bestellung 1366 Stücke
Lieferzeit 21-28 Tag (e)
SQM120P04-04L_GE3
SQM120P04-04L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 120A TO263
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 13980pF @ 20V
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SQM120
sqm120p0.pdf
auf Bestellung 800 Stücke
Lieferzeit 21-28 Tag (e)