SQM120P06-07L_GE3 Vishay / Siliconix
auf Bestellung 36241 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 8.45 EUR |
| 10+ | 7.07 EUR |
| 25+ | 6.71 EUR |
| 100+ | 5.72 EUR |
| 250+ | 5.41 EUR |
| 500+ | 5.1 EUR |
| 800+ | 4.34 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQM120P06-07L_GE3 Vishay / Siliconix
Description: MOSFET P-CH 60V 120A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 6.7mOhm @ 30A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263 (D²Pak), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14280 pF @ 25 V.
Weitere Produktangebote SQM120P06-07L_GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
SQM120P06-07L_GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
|
|
|
SQM120P06-07L-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
|
| SQM120P06-07L_GE3 | Hersteller : VISHAY |
SQM120P06-07L-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
||
 |
SQM120P06-07L_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 120A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D²Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14280 pF @ 25 V |
Produkt ist nicht verfügbar |
|
|
|
SQM120P06-07L_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 120A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D²Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14280 pF @ 25 V |
Produkt ist nicht verfügbar |